PMEG2010ET,215 NXP Semiconductors, PMEG2010ET,215 Datasheet - Page 5

• Manufacturer Part Number: PMEG2010ET,215
• Description: SCHOTTKY RECT 20V 1A SOT-23
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PMEG2010ET,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Voltage - Forward (vf) (max) @ If: 500mV @ 1A
• Voltage - Dc Reverse (vr) (max): 20V
• Current - Average Rectified (io): 1A (DC)
• Current - Reverse Leakage @ Vr: 200µA @ 20V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Capacitance @ Vr, F: 80pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Product: Schottky Diodes
• Peak Reverse Voltage: 20 V
• Forward Continuous Current: 1 A
• Max Surge Current: 9 A
• Configuration: Single
• Forward Voltage Drop: 0.5 V
• Maximum Reverse Leakage Current: 200 uA
• Maximum Power Dissipation: 420 mW
• Operating Temperature Range: + 150 C
• Mounting Style: SMD/SMT
• Reverse Recovery Time (trr): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-4100-2; 934061048215; PMEG2010ET T/R

NXP Semiconductors
PMEG2010EH_EJ_ET_4
Product data sheet
Fig 1. Forward current as a function of forward
Fig 3. Diode capacitance as a function of reverse voltage; typical values
(mA)
(1) T
(2) T
(3) T
(4) T
(5) T
I
10
10
F
10
10
10
1
3
2
1
2
voltage; typical values
f = 1 MHz; T
0
amb
amb
amb
amb
amb
(1)
= 150 C
= 125 C
= 85 C
= 25 C
= 40 C
0.1
(2)
amb
(3)
= 25 C
0.2
(4)
0.3
(pF)
C
(5)
120
d
80
40
0
0
0.4
006aaa247
V
F
(V)
4
0.5
Rev. 04 — 20 March 2007
8
Fig 2. Reverse current as a function of reverse
12
( A)
I
1 A very low V
R
(1) T
(2) T
(3) T
(4) T
(5) T
10
10
10
10
10
10
10
10
1
5
4
3
2
1
2
3
voltage; typical values
0
amb
amb
amb
amb
amb
16
006aaa249
V
PMEG2010EH/EJ/ET
= 150 C
= 125 C
= 85 C
= 25 C
= 40 C
R
(V)
4
20
(1)
(2)
(3)
(4)
(5)
F
MEGA Schottky barrier rectifiers
8
12
© NXP B.V. 2007. All rights reserved.
16
006aaa248
V
R
(V)
20
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