FDH3595 Fairchild Semiconductor, FDH3595 Datasheet
FDH3595
Manufacturer Part Number
FDH3595
Description
DIODE 125V 200MA DO35
Manufacturer
Fairchild Semiconductor
Datasheet
1.FDH3595.pdf
(3 pages)
Specifications of FDH3595
Voltage - Forward (vf) (max) @ If
1V @ 200mA
Voltage - Dc Reverse (vr) (max)
125V
Current - Average Rectified (io)
200mA
Current - Reverse Leakage @ Vr
1nA @ 125V
Diode Type
Standard
Speed
Small Signal =< 200mA (Io), Any Speed
Capacitance @ Vr, F
8pF @ 0V, 1MHz
Mounting Type
Through Hole
Package / Case
DO-204AH, DO-35, Axial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDH3595
Manufacturer:
Fairchild Semiconductor
Quantity:
6 169
ã 1997 Fairchild Semiconductor Corporation
P
R
W
I
I
i
i
T
T
Symbol
Symbol
f
f(surge)
O
F
D
stg
J
Absolute Maximum Ratings*
High Conductance Low Leakage Diode
Sourced from Process 1M. See MMBD1501-1505 for characteristics.
*
NOTES:
1) These ratings are based on a maximum junction temperature of 200 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
JA
IV
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Total Device Dissipation
Thermal Resistance, Junction to Ambient
Working Inverse Voltage
Average Rectified Current
DC Forward Current
Recurrent Peak Forward Current
Peak Forward Surge Current
Storage Temperature Range
Operating Junction Temperature
FDH3595
Derate above 25 C
Pulse width = 1.0 second
Pulse width = 1.0 microsecond
DO-35
Characteristic
Parameter
TA = 25°C unless otherwise noted
TA = 25°C unless otherwise noted
MMBD7000*
Discrete POWER & Signal
Max
3.33
500
300
-65 to +175
Value
600
125
200
500
175
1.0
4.0
Technologies
Units
Units
mW/ C
mA
mA
mA
mW
C/W
V
A
A
C
C
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FDH3595 Summary of contents
Page 1
... FDH3595 DO-35 High Conductance Low Leakage Diode Sourced from Process 1M. See MMBD1501-1505 for characteristics. Absolute Maximum Ratings* Symbol W Working Inverse Voltage IV I Average Rectified Current Forward Current F Recurrent Peak Forward Current i f Peak Forward Surge Current i f(surge) Pulse width = 1.0 second Pulse width = 1 ...
Page 2
Electrical Characteristics Symbol Parameter B Breakdown Voltage V I Reverse Voltage Leakage Current R V Forward Voltage F C Diode Capacitance T High Conductance Low Leakage Diode TA = 25°C unless otherwise noted Test Conditions I = 100 A R ...
Page 3
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ CoolFET™ CROSSVOLT™ CMOS FACT™ FACT Quiet Series™ ® FAST FASTr™ GTO™ ...