EGP10A Fairchild Semiconductor, EGP10A Datasheet - Page 81

• Manufacturer Part Number: EGP10A
• Description: DIODE FAST GPP 1A 50V DO-41
• Manufacturer: Fairchild Semiconductor

Specifications of EGP10A

• Voltage - Forward (vf) (max) @ If: 950mV @ 1A
• Voltage - Dc Reverse (vr) (max): 50V
• Current - Average Rectified (io): 1A
• Current - Reverse Leakage @ Vr: 5µA @ 50V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50ns
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -

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Bipolar Power Transistors – Audio/Car Amp Output Transistors
TO-220 NPN Configuration
FJP3835
TO-220F NPN Configuration
FJPF3835
TO-264 NPN Configuration
FJL4315
TO-264 PNP Configuration
FJL4215
TO-3P NPN Configuration
KSC4010
FJA3835
FJA4310
FJA4313
TO-3P PNP Configuration
KSA3010
FJA4210
FJA4213
TO-3PF NPN Configuration
FJAF4310
TO-3PF PNP Configuration
FJAF4210
Products
I
C
15
15
10
15
10
15
10
10
8
8
6
8
6
(A)
V
CEO
120
120
230
230
120
120
140
230
120
140
230
140
140
(V) V
CBO
200
200
230
230
120
200
200
230
120
200
230
200
200
(V) V
EBO
8
8
5
5
5
8
6
5
5
6
5
6
6
(V) P
C
150
150
100
130
100
130
50
30
60
80
60
80
80
(W)
Min
120
120
120
55
55
55
50
55
55
50
55
50
50
2-76
Discrete Power Products –
Max
250
250
160
160
160
250
180
160
160
180
160
180
180
h
FE
@I
C
3
3
1
1
1
3
3
1
1
3
1
3
3
(A)
Bold = New Products (introduced January 2003 or later)
@V
CE
4
4
–
–
5
4
5
5
5
4
4
4
4
(V)
Typ (V) Max (V) @I
Bipolar Transistors and JFETs
0.4
0.4
–
–
–
–
–
–
–
–
–
–
–
0.5
0.5
2.5
0.5
0.5
0.5
2.5
0.5
0.5
0.5
0.5
3
3
V
CE
(sat)
C
–
–
3
3
5
3
5
5
5
5
5
5
5
(A) @I
0.3
0.3
0.5
0.3
0.5
0.5
0.5
0.5
0.5
0.5
0.5
B
–
–
(A)