UH1B-E3/5AT Vishay, UH1B-E3/5AT Datasheet - Page 3

• Manufacturer Part Number: UH1B-E3/5AT
• Description: DIODE 1A 100V 25NS FER DO214AC
• Manufacturer: Vishay

Specifications of UH1B-E3/5AT

• Voltage - Forward (vf) (max) @ If: 1.05V @ 1A
• Voltage - Dc Reverse (vr) (max): 100V
• Current - Average Rectified (io): 1A
• Current - Reverse Leakage @ Vr: 1µA @ 100V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 30ns
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Product: Ultra Fast Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 100 V
• Forward Voltage Drop: 1.05 V
• Recovery Time: 25 ns
• Forward Continuous Current: 1 A
• Max Surge Current: 30 A
• Reverse Current Ir: 1 uA
• Mounting Style: SMD/SMT
• Maximum Operating Temperature: + 175 C
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Details

RATINGS AND CHARACTERISTICS CURVES
(T
Document Number: 89111
Revision: 12-Jun-08
A
= 25 °C unless otherwise noted)
Figure 3. Typical Instantaneous Forward Characteristics
0.01
100
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
1.2
1.0
0.8
0.6
0.4
0.2
0.1
0.1
Figure 1. Maximum Forward Current Derating Curve
10
0
0
1
0.2
95
0
Figure 2. Forward Power Loss Characteristics
T
T
at the Cathode Band Terminal
A
L
= 175 °C
105
0.4
Measured
T
0.2
A
Instantaneous Forward Voltage (V)
= 150 °C
D = 0.1
Average Forward Current (A)
115
0.6
Lead Temperature (°C)
0.4
T
D = 0.2
A
125
T
0.8
= 125 °C
A
= 25 °C
D = 0.3
T
[e-mail], [e-mail], [e-mail]
A
135
0.6
1.0
For technical questions within your region, please contact one of the following:
= 100 °C
D = 0.5
145
D = t
1.2
0.8
p
/T
155
1.4
D = 0.8
T
1.0
t
p
D = 1.0
165
1.6
175
1.2
1.8
1000
1000
0.01
100
100
100
0.1
10
10
10
1
1
1
0.01
0.1
10
Figure 6. Typical Transient Thermal Impedance
Junction to Ambient
Vishay General Semiconductor
Figure 4. Typical Reverse Characteristics
Percent of Rated Peak Reverse Voltage (%)
Figure 5. Typical Junction Capacitance
20
T
A
30
= 175 °C
0.1
UH1B, UH1C & UH1D
T
A
t - Pulse Duration (s)
Reverse Voltage (V)
40
= 125 °C
1
T
T
T
A
A
A
50
= 150 °C
= 100 °C
= 25 °C
1
60
70
10
T
f = 1.0 MHz
V
J
sig
= 25 °C
10
= 50 mVp-p
80
90
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100
100
100
3