SS3H10-E3/57T Vishay, SS3H10-E3/57T Datasheet - Page 3

• Manufacturer Part Number: SS3H10-E3/57T
• Description: DIODE SCHOTTKY 3A 100V SMC
• Manufacturer: Vishay

Specifications of SS3H10-E3/57T

• Operating Temperature Range: - 65 C to + 175 C
• Diode Type: Schottky
• Voltage - Forward (vf) (max) @ If: 800mV @ 3A
• Voltage - Dc Reverse (vr) (max): 100V
• Current - Average Rectified (io): 3A
• Current - Reverse Leakage @ Vr: 20µA @ 100V
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Product: Schottky Diodes
• Peak Reverse Voltage: 100 V
• Forward Continuous Current: 3 A
• Max Surge Current: 100 A
• Configuration: Single
• Forward Voltage Drop: 0.8 V
• Maximum Reverse Leakage Current: 20 uA
• Mounting Style: SMD/SMT
• Repetitive Reverse Voltage Vrrm Max: 100V
• Forward Current If(av): 3A
• Forward Voltage Vf Max: 800mV
• Forward Surge Current Ifsm Max: 100A
• Rectifier Type: Schottky Diode
• Peak Rep Rev Volt: 100V
• Avg. Forward Curr (max): 3A
• Rev Curr: 20uA
• Peak Non-repetitive Surge Current (max): 100A
• Forward Voltage: 0.8V
• Operating Temp Range: -65C to 175C
• Package Type: SMC
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: SS3H10-E3/57TGITR

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88752
Revision: 19-May-08
10 000
Figure 3. Typical Instantaneous Forward Characteristics
1000
0.01
0.01
100
100
0.1
0.1
10
10
1
1
10
0
Figure 4. Typical Reverse Characteristics
Percent of Rated Peak Reverse Voltage (%)
20
0.2
T
J
Instantaneous Forward Voltage (V)
= 150 °C
30
0.4
40
T
T
T
J
T
J
J
0.079 (2.06)
0.103 (2.62)
= 125 °C
J
= 175 °C
0.6
= 150 °C
T
= 175 °C
0.030 (0.76)
J
50
0.126 (3.20)
0.114 (2.90)
0.060 (1.52)
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= 25 °C
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T
J
= 25 °C
60
0.8
T
J
= 125 °C
70
1.0
DO-214AB (SMC)
80
0.305 (7.75)
0.260 (6.60)
0.320 (8.13)
0.280 (7.11)
1.2
Cathode Band
90
1.4
100
0.008 (0.2)
0 (0)
0.246 (6.22)
0.220 (5.59)
0.012 (0.305)
0.006 (0.152)
0.126 (3.20)
1000
MIN.
100
100
10
10
1
0.01
0.1
Figure 6. Typical Transient Thermal Impedance
Vishay General Semiconductor
Figure 5. Typical Junction Capacitance
Mounting Pad Layout
0.1
0.320 REF.
Reverse Voltage (V)
t - Pulse Duration (s)
0.060 (1.52)
1
MIN.
SS3H9 & SS3H10
0.185 (4.69)
1
MAX.
10
10
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100
100
3