BAS32L,135 NXP Semiconductors, BAS32L,135 Datasheet - Page 8

• Manufacturer Part Number: BAS32L,135
• Description: DIODE SW 75V 200MA H-S SOD80C
• Manufacturer: NXP Semiconductors

Specifications of BAS32L,135

• Package / Case: LL-34, LLDS, MiniMELF, SOD80C
• Voltage - Forward (vf) (max) @ If: 1V @ 100mA
• Voltage - Dc Reverse (vr) (max): 75V
• Current - Average Rectified (io): 200mA (DC)
• Current - Reverse Leakage @ Vr: 5µA @ 75V
• Diode Type: Standard
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 4ns
• Capacitance @ Vr, F: 2pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Product: Switching Diodes
• Peak Reverse Voltage: 100 V
• Forward Continuous Current: 0.2 A
• Max Surge Current: 4 A
• Configuration: Single
• Recovery Time: 4 ns
• Forward Voltage Drop: 1 V
• Maximum Reverse Leakage Current: 5 uA
• Operating Temperature Range: + 200 C
• Maximum Operating Temperature: + 200 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 933913910135; BAS32L /T3; BAS32L /T3

NXP Semiconductors
12. Revision history
Table 9.
BAS32L
Product data sheet
Document ID
BAS32L v.7
Modifications:
BAS32L v.6
BAS32L v.5
BAS32L v.4
BAS32L v.3
BAS32L v.2
BAS32L v.1
Revision history
20110120
20081029
20080103
20050322
19960423
Release date
20020123
19960910
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•
Table 4 “Marking
Section 13 “Legal
All information provided in this document is subject to legal disclaimers.
Data sheet status
Product data sheet
Product data sheet
Product data sheet
Product data sheet
Product specification
Product specification
Product specification
codes”: amended
Rev. 7 — 20 January 2011
information”: updated
Change notice
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High-speed switching diode
Supersedes
BAS32L v.6
BAS32L v.5
BAS32L v.4
BAS32L v.3
BAS32L v.2
BAS32L v.1
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© NXP B.V. 2011. All rights reserved.
BAS32L
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