BAS321,135 NXP Semiconductors, BAS321,135 Datasheet

DIODE GP 200V 250MA SOD-323

BAS321,135

Manufacturer Part Number
BAS321,135
Description
DIODE GP 200V 250MA SOD-323
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BAS321,135

Voltage - Forward (vf) (max) @ If
1.25V @ 200mA
Voltage - Dc Reverse (vr) (max)
200V
Current - Average Rectified (io)
250mA (DC)
Current - Reverse Leakage @ Vr
100nA @ 200V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
50ns
Capacitance @ Vr, F
2pF @ 0V, 1MHz
Mounting Type
Surface Mount
Package / Case
SC-76, SOD-323, UMD2
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934055352135
Product data sheet
Supersedes data of 1999 Feb 09
DATA SHEET
BAS321
General purpose diode
DISCRETE SEMICONDUCTORS
2004 Jan 26

Related parts for BAS321,135

BAS321,135 Summary of contents

Page 1

DATA SHEET BAS321 General purpose diode Product data sheet Supersedes data of 1999 Feb 09 DISCRETE SEMICONDUCTORS 2004 Jan 26 ...

Page 2

... NXP Semiconductors General purpose diode FEATURES • Small plastic SMD package • Switching speed: max • General application • Continuous reverse voltage: max. 200 V • Repetitive peak reverse voltage: max. 250 V • Repetitive peak forward current: max. 625 mA. APPLICATIONS • General purpose switching in e.g. surface mounted circuits ...

Page 3

... NXP Semiconductors General purpose diode CHARACTERISTICS = 25 °C unless otherwise specified SYMBOL PARAMETER V forward voltage F I reverse current R C diode capacitance d t reverse recovery time rr THERMAL CHARACTERISTICS SYMBOL R thermal resistance from junction to soldering point th(j-s) R thermal resistance from junction to ambient th(j-a) Notes 1 ...

Page 4

... NXP Semiconductors General purpose diode GRAPHICAL DATA 300 handbook, halfpage I F (mA) 200 100 100 Device mounted on an FR4 printed-circuit board. Fig.2 Maximum permissible continuous forward current as a function of ambient temperature handbook, full pagewidth I FSM ( − Based on square wave currents °C prior to surge. ...

Page 5

... NXP Semiconductors General purpose diode 2 10 handbook, halfpage I R (µA) 10 (1) ( 100 ( maximum values. R Rmax ( typical values. R Rmax Fig.5 Reverse current as a function of junction temperature. 300 handbook, halfpage V R (V) 200 100 100 Fig.7 Maximum permissible continuous reverse voltage as a function of the ambient temperature ...

Page 6

... NXP Semiconductors General purpose diode handbook, full pagewidth D.U. Ω ( Input signal: reverse pulse rise time t r Oscilloscope: rise time t = 0.35 ns; r Circuit capacitance C ≤ (oscilloscope input + parasitic capacitance) 2004 Jan 10% SAMPLING OSCILLOSCOPE Ω MGA881 = 0.6 ns; reverse voltage pulse duration t p Fig.8 Reverse recovery time and waveforms. ...

Page 7

... NXP Semiconductors General purpose diode PACKAGE OUTLINE Plastic surface-mounted package; 2 leads 1 (1) DIMENSIONS (mm are the original dimensions UNIT max 1.1 0.40 0.25 mm 0.05 0.8 0.25 0.10 Note 1. The marking bar indicates the cathode OUTLINE VERSION IEC SOD323 2004 Jan scale 1.8 1 ...

Page 8

... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...

Page 9

... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www ...

Related keywords