BYV25D-600,118 NXP Semiconductors, BYV25D-600,118 Datasheet - Page 4

• Manufacturer Part Number: BYV25D-600,118
• Description: DIODE RECT 600V 5A D-PAK
• Manufacturer: NXP Semiconductors

Specifications of BYV25D-600,118

• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Voltage - Forward (vf) (max) @ If: 1.3V @ 5A
• Voltage - Dc Reverse (vr) (max): 600V
• Current - Average Rectified (io): 5A
• Current - Reverse Leakage @ Vr: 50µA @ 600V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 60ns
• Mounting Type: Surface Mount
• Product: Switching Diodes
• Peak Reverse Voltage: 600 V
• Forward Continuous Current: 5 A
• Max Surge Current: 66 A
• Configuration: Single
• Recovery Time: 60 ns
• Forward Voltage Drop: 1.3 V
• Maximum Reverse Leakage Current: 50 uA
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934062054118

NXP Semiconductors
6. Characteristics
Table 5.
T
BYV25D-600_1
Product data sheet
Symbol
Static characteristics
V
I
Dynamic characteristics
Q
t
I
V
R
rr
RM
j
Fig 2.
F
FR
r
= 25 C unless otherwise specified.
(1) T
(2) T
(3) T
Forward current as a function of forward voltage
j
j
j
Characteristics
= 150 C; typical values
= 150 C; maximum values
= 25 C; maximum values
Parameter
forward voltage
reverse current
recovered charge
reverse recovery time
peak reverse recovery
current
forward recovery
voltage
(A)
I
F
15
10
Conditions
I
I
V
V
I
see
I
dI
I
dI
see
I
see
F
F
F
F
F
F
5
0
R
R
F
F
= 5 A; T
= 5 A
= 2 A to V
= 1 A to V
= 10 A to V
= 10 A; dI
0
/dt = 100 A/ s; see
/dt = 50 A/ s; T
= 600 V
= 600 V; T
Figure 3
Figure 3
Figure 4
j
= 150 C; see
0.4
Rev. 01 — 29 July 2008
F
R
R
/dt = 10 A/ s;
R
j
= 100 C
30 V; dI
30 V;
30 V;
j
= 100 C;
0.8
Figure 3
F
/dt = 20 A/ s;
(1)
Figure 2
(2)
1.2
(3)
003aac232
V
F
(V)
1.6
Min
-
-
-
-
-
-
-
-
BYV25D-600
Rectifier diode, ultrafast
Typ
0.97
1.12
2
0.1
40
50
3
3.2
© NXP B.V. 2008. All rights reserved.
Max
1.11
1.30
50
0.35
70
60
5.5
-
Unit
V
V
mA
nC
ns
A
V
A
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