STPS2H100 STMicroelectronics, STPS2H100 Datasheet - Page 2

• Manufacturer Part Number: STPS2H100
• Description: DIODE SCHOTTKY 2A 100V DO-41
• Manufacturer: STMicroelectronics

Specifications of STPS2H100

• Voltage - Forward (vf) (max) @ If: 860mV @ 2A
• Voltage - Dc Reverse (vr) (max): 100V
• Current - Average Rectified (io): 2A
• Current - Reverse Leakage @ Vr: 1µA @ 100V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Capacitance @ Vr, F: -

Characteristics
1
Table 2.
1.
Table 3.
Table 4.
1. Pulse test: t
2. Pulse test: t
2/7
Symbol
Symbol
Symbol
I
R
V
F(RMS)
R
P
dV/dt
I
I
V
I
F(AV)
I
T
RRM
FSM
th(j-a)
ARM
R
RRM
th(j-l)
T
F
dPtot
stg
dTj
(1)
(2)
j
<
Repetitive peak reverse voltage
Forward rms current
Average forward current
Surge non repetitive forward current
Repetitive peak reverse current
Repetitive peak avalanche power
Storage temperature range
Operating junction temperature
Critical rate of rise of reverse voltage
Junction to ambient
Junction to lead
Reverse leakage current
Forward voltage drop
Rth(j-a)
1
p
p
Characteristics
Absolute ratings (limiting values)
Thermal resistance
Static electrical characteristics
To evaluate the conduction losses use the following equation:
P = 0.62 x I
= 5 ms, δ < 2%
= 380 µs, δ < 2%
condition to avoid thermal runaway for a diode on its own heatsink
Parameter
F(AV)
+ 0.04 I
Lead length = 10 mm
F
2
(1)
(RMS)
Parameter
Parameter
Doc ID 9217 Rev 4
T
T
T
T
T
T
j
j
j
j
j
j
= 25 °C
= 125 °C
= 25 °C
= 125 °C
= 25 °C
= 125 °C
Test conditions
T
t
t
t
p
p
p
L
= 10 ms sinusoidal
= 2 ms square, F = 1 kHz
= 1 µs, T
V
I
I
F
F
= 120 °C, δ = 0.5
R
= 2 A
= 4 A
= V
RRM
j
= 25 °C
Min.
Typ.
0.65
0.72
0.2
-65 to + 175
10000
Value
Value
1500
100
175
100
10
50
50
35
STPS2H100RL
2
Max.
0.86
0.70
0.92
0.78
0.5
1
°C/W
Unit
V/µs
Unit
Unit
mA
µA
°C
°C
W
V
A
A
A
A
V