1N914B,113 NXP Semiconductors, 1N914B,113 Datasheet - Page 4

• Manufacturer Part Number: 1N914B,113
• Description: DIODE SW HS 100V 225MA DO-35
• Manufacturer: NXP Semiconductors

Specifications of 1N914B,113

• Voltage - Forward (vf) (max) @ If: 720mV @ 5mA
• Voltage - Dc Reverse (vr) (max): 75V
• Current - Average Rectified (io): 75mA (DC)
• Current - Reverse Leakage @ Vr: 5µA @ 75V
• Diode Type: Standard
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 8ns
• Capacitance @ Vr, F: 4pF @ 0V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Lead Free Status / RoHS Status: Not applicable / Not applicable
• Other names: 1N914B T/R; 568-1365-2; 933029610113

Philips Semiconductors
GRAPHICAL DATA
2003 Jun 06
handbook, full pagewidth
High-speed diodes
Device mounted on an FR4 printed-circuit board; lead length 10 mm.
Fig.2
Based on square wave currents.
T
j
(mA)
I FSM
= 25 C prior to surge.
I F
(A)
10
100
10
50
10
0
1
2
1
0
1
Maximum permissible continuous forward
current as a function of ambient
temperature.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
100
10
T
amb
( C)
o
MGD289
200
10
4
2
handbook, halfpage
(1) T
(2) T
(3) T
Fig.3
(mA)
I F
600
400
200
j
j
j
0
= 175 C; typical values.
= 25 C; typical values.
= 25 C; maximum values.
0
Forward current as a function of forward
voltage.
1N914; 1N914A; 1N914B
10
3
(1)
1
(2)
t p ( s)
V F (V)
Product specification
(3)
MBG464
MBG704
10
2
4