STGP20NC60V STMicroelectronics, STGP20NC60V Datasheet - Page 2

• Manufacturer Part Number: STGP20NC60V
• Description: IGBT N-CHAN 60A 600V TO220
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STGP20NC60V

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 20A
• Current - Collector (ic) (max): 60A
• Power - Max: 200W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Type: IGBT
• Dc Collector Current: 60A
• Collector Emitter Voltage Vces: 600V
• Power Dissipation Pd: 200W
• Operating Temperature Range: -55°C To +150°C
• No. Of Pins: 3
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 600V
• Collector Current (dc) (max): 60A
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-220
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -55C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 2.5 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Continuous Collector Current At 25 C: 60 A
• Gate-emitter Leakage Current: +/- 100 nA
• Power Dissipation: 200 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 60 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Collector Emitter Voltage V(br)ceo: 600V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 497-4355-5

STGP20NC60V - STGW20NC60V
2/11
Table 3: Absolute Maximum ratings
(1)Pulse width limited by max. junction temperature.
Table 4: Thermal Data
ELECTRICAL CHARACTERISTICS (T
Table 5: Off
Table 6: On
(#) Calculated according to the iterative formula:
I
C
Rthj-case
Rthj-amb
V
V
Symbol
Symbol
Symbol
V
I
BR(CES)
CM
CE(SAT)
V
T
V
P
I
I
V
GE(th)
T
CES
GES
C
T
CES
ECR
TOT
I
I
T
GE
stg
C
C
L
j
(1)
=
------------------------------------------------------------------------------------------------- -
R
THJ C
Collectro-Emitter Breakdown
Voltage
Collector-Emitter Leakage
Current (V
Gate-Emitter Leakage
Current (V
Gate Threshold Voltage
Collector-Emitter Saturation
Voltage
Collector-Emitter Voltage (V
Reverse Battery Protection
Gate-Emitter Voltage
Collector Current (continuous) at 25°C (#)
Collector Current (continuous) at 100°C (#)
Collector Current (pulsed)
Total Dissipation at T
Derating Factor
Storage Temperature
Operating Junction Temperature
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Maximum Lead Temperature for Soldering
Purpose (1.6 mm from case, for 10 sec.)
–
T
V
JMAX
CESAT M AX
Parameter
Parameter
CE
CE
–
= 0)
= 0)
T
C
Parameter
(
C
T
C
= 25°C
I
C
)
GS
CASE
= 0)
I
V
Tc=25°C
Tc=125°C
V
V
V
V
Tj= 125°C
C
GE
GE
CE
GE
GE
= 1 mA, V
= V
= 15 V, I
= 15 V, I
=25°C UNLESS OTHERWISE SPECIFIED)
= Max Rating
= ± 20 V , V
Test Conditions
Test Conditions
GE
, I
C
C
C
GE
= 250 µA
TO-220
TO-247
= 20A, Tj= 25°C
= 20A,
= 0
CE
= 0
Min.
– 55 to 150
Min.
Min.
3.75
600
Value
± 20
600
100
200
1.6
20
60
30
Typ.
300
Typ.
Typ.
1.8
1.7
0.625
Max.
62.5
50
± 100
Max.
Max.
5.75
2.5
10
1
Symbol
W/°C
°C/W
°C/W
°C
°C
W
V
V
V
A
A
A
Unit
Unit
mA
µA
nA
V
V
V
V