STGW35HF60WD STMicroelectronics, STGW35HF60WD Datasheet - Page 5

• Manufacturer Part Number: STGW35HF60WD
• Description: IGBT 600V 60A 200W TO-247
• Manufacturer: STMicroelectronics

Specifications of STGW35HF60WD

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 20A
• Current - Collector (ic) (max): 60A
• Power - Max: 200W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 600V
• Collector Current (dc) (max): 60A
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-247
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 497-10073-5

STGW35HF60WD
2.1
Figure 2.
Figure 4.
Figure 6.
V
(norm)
CE(sat)
(norm)
I
C
1.6
1.4
1.2
0.8
0.6
0.4
V
200
150
100
1.05
0.95
(A)
50
1
CES
1.1
0.9
0
0
1
0
-50
Electrical characteristics (curves)
Output characteristics
Normalized V
Normalized breakdown voltage vs.
temperature
T
J
= -50 ºC
V
2
20
GE
0
= 15 V
T
J
4
V
= 25 ºC
GE
50
= 15 V
40
I
C
CE(sat)
= 1 mA
11 V
6
T
J
V
= 150 ºC
GE
100
vs. I
= 6 V
60
10 V
9 V
8 V
7 V
8
C
T
V
J
150
(°C)
CE
Doc ID 15592 Rev 5
I
C
(V)
10
(A)
80
Figure 3.
Figure 5.
Figure 7.
V
(norm)
CE(sat)
(norm)
V
1.6
1.4
1.2
0.8
0.6
I
C
GE(th)
200
150
100
1
(A)
1.2
1.1
0.9
0.8
0.7
0.6
50
-50
0
1
-50
0
I
10 A
C
= 5 A
Transfer characteristics
Normalized V
Normalized gate threshold voltage
vs. temperature
0
3
0
V
CE
V
I
C
= 10 V
Electrical characteristics
V
GE
= 250 µA
GE
= 15 V
50
CE(sat)
6
50
= V
CE
vs. temperature
100
9
100
I
I
I
C
C
C
20 A
= 80 A
= 60 A
= 40 A
30 A
V
GE
T
T
J
(V)
12
J
150
(°C)
(°C)
150
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