IXBH16N170 IXYS, IXBH16N170 Datasheet - Page 5

• Manufacturer Part Number: IXBH16N170
• Description: IGBT W/DIODE 1700V 25A TO-247AD
• Manufacturer: IXYS
• Series: BIMOSFET™r

Specifications of IXBH16N170

• Voltage - Collector Emitter Breakdown (max): 1700V
• Vce(on) (max) @ Vge, Ic: 3.3V @ 15V, 16A
• Current - Collector (ic) (max): 40A
• Power - Max: 250W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247AD
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 1.7kV
• Collector Current (dc) (max): 40A
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-247AD
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Collector- Emitter Voltage Vceo Max: 1700 V
• Maximum Gate Emitter Voltage: 20 V
• Power Dissipation: 150 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 25 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Vces, (v): 1700
• Ic25, Tc=25°c, (a): 40
• Ic90, Tc=90°c, (a): 16
• Vce(sat), Typ, Tj=25°c, (v): 3.3
• Tf Typ, Tj=25°c, (ns): 705
• Gate Drive, (v): 15
• Rthjc, Max, (k/w): 0.50
• Package Style: TO-247AD
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: Q1143876

© 2008 IXYS CORPORATION, All rights reserved
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60
0
25
20
8
Switching Times vs. Gate Resistance
t
T
V
R
V
V
10
r
J
Switching Times vs. Drain Current
CE
G
GE
CE
35
= 125ºC, V
T
= 22Ω
40
Rise Time vs. Junction Temperature
= 850V
J
= 15V
= 850V
= 25ºC
12
Fig. 17. Resistive Turn-off
Fig. 15. Resistive Turn-on
45
14
Fig. 13. Resistive Turn-on
t
60
d(on)
GE
55
16
T
= 15V
J
- - - -
- Degrees Centigrade
I
18
R
80
C
65
G
- Amperes
- Ohms
20
I
C
75
100
= 32A
t
R
V
f
22
CE
G
I
I
= 22Ω, V
C
C
I
= 850V
T
85
C
= 32A
= 16A
24
J
= 16A
= 125ºC
120
26
t
95
d(off)
GE
= 15V
28
140
- - - -
105
30
115
160
32
180
160
140
120
100
80
60
40
20
360
340
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160
125
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200
150
100
900
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300
50
0
25
Switching Times vs. Junction Temperature
20
8
Switching Times vs. Gate Resistance
t
R
V
R
V
V
10
f
G
CE
35
GE
CE
t
T
V
G
f
J
CE
= 22Ω, V
= 22Ω
= 850V
40
= 125ºC, V
= 15V
= 850V
= 850V
12
I
45
Fig. 18. Resistive Turn-off
C
Fig. 16. Resistive Turn-off
= 16A
Rise Time vs. Drain Current
t
Fig. 14. Resistive Turn-on
14
d(off)
GE
60
55
T
t
J
d(off
= 15V
GE
- Degrees Centigrade
- - - -
16
= 15V
)
65
- - - -
80
I
R
C
18
G
I
C
= 32A
75
- Ohms
T
- Amperes
J
T
100
20
= 125ºC
J
= 25ºC
85
22
120
95
24
I
IXBH16N170
IXBT16N170
I
105
C
C
= 32A
140
26
= 16A
IXYS REF: B_16N170(4A)10-06-08
115
28
160
125
30
1400
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200
0
260
250
240
230
220
210
200
190
32