IXGP30N60C3 IXYS, IXGP30N60C3 Datasheet
IXGP30N60C3
Specifications of IXGP30N60C3
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IXGP30N60C3 Summary of contents
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... GE(th CES CE CES ±20V 0V, V GES 42A 15V, Note1 CE(sat © 2008 IXYS CORPORATION, All rights reserved IXGA42N30C3 IXGH42N30C3 IXGP42N30C3 Maximum Ratings 300 = 1MΩ 300 GE ±20 ±30 42 250 42 250 = 10Ω ≤ 300V 223 -55 ... +150 150 -55 ... +150 300 260 1.13/10 2 ...
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... TO-220 thCK TO-247 Note1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. TO-263 (IXGA) Outline IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 Characteristic Values Min ...
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... Volts CE Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 3.4 3.2 3 84A C 42A 2.8 21A 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1 Volts GE © 2008 IXYS CORPORATION, All rights reserved V = 15V GE 13V 11V 1.6 2.0 2.4 = 15V GE 13V 11V 1.6 2.0 2.4 2 25º ...
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... I - Amperes C Fig. 9. Capacitance 10,000 MHz 1,000 100 Volts CE 1.00 0.10 0.01 0.00001 0.0001 IXYS reserves the right to change limits, test conditions, and dimensions 40º 25ºC 10 125º 100 120 140 ies oes res Fig. 11. Maximum Transient Thermal Impedance 0.001 0.01 Pulse Width - Seconds ...
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... 15V GE G 140 V = 200V CE 130 120 110 100 25º Amperes C © 2008 IXYS CORPORATION, All rights reserved 3.2 2.0 1.8 2.8 1.6 2.4 1 84A C 2.0 1.2 1.6 1.0 0.8 1.2 0.6 0.8 0 42A C 0.4 0.2 0.0 0 1.3 200 1 ...
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... R - Ohms G Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature 100 I = 84A 42A Degrees Centigrade J IXYS reserves the right to change limits, test conditions, and dimensions. 140 100 90 120 80 100 42A d(on Ω 15V GE = 200V 105 115 125 IXGA42N30C3 IXGH42N30C3 Fig. 19. Inductive Turn-on Switching Times vs ...