IXGP12N100AU1 IXYS, IXGP12N100AU1 Datasheet
IXGP12N100AU1
Specifications of IXGP12N100AU1
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IXGP12N100AU1 Summary of contents
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... CES ± GES CE(sat) C CE90 GE IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved IXGA/IXGP12N100U1 IXGA/IXGP12N100AU1 1000 V Maximum Ratings 1000 = 1 MW 1000 GE ±20 ± 150 0.8 V CES 100 -55 ... +150 150 -55 ... +150 0.45/4 Nm/lb.in. 0.55/5 Nm/lb.in. ...
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... Characteristic Values Min. Typ. 6.5 140 = 25° Min. Recommended Footprint IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 4,850,072 4,931,844 5,034,796 IXGP12N100U1 IXGP12N100AU1 TO-220 AB (IXGP) Outline Max 700 Dim. Millimeter Min. Max. ...
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... CE Figure 3. Saturation Voltage Characteristics 10V Volts GE Figure 5. Admittance Curves © 2000 IXYS All rights reserved IXGA12N100U1 IXGA12N100AU1 25° 125° IXGP12N100U1 IXGP12N100AU1 100 T = 25° Volts CE Figure 2. Extended Output Characteristics 1 15V 1.4 1 1 100 T - Degrees C J Figure 4. Temperature Dependence of V 1000 ...
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... IXYS All rights reserved IXGA12N100U1 IXGA12N100AU1 5 1000 800 4 t 600 fi 3 400 2 200 OFF C 100 10 0 Duty Cycle 0.001 0.01 Pulse Width - Seconds Figure 11. Transient Thermal Resistance IXGP12N100U1 IXGP12N100AU1 (OFF Ohms G Figure 8. Dependence of tfi and 125° 4 dV/dt < 5V/ 200 400 600 800 V - Volts CE Figure 10 ...