IRGB4060DPBF International Rectifier, IRGB4060DPBF Datasheet - Page 6

• Manufacturer Part Number: IRGB4060DPBF
• Description: IGBT ULT FAST DIO 600V TO-220AB
• Manufacturer: International Rectifier

Specifications of IRGB4060DPBF

• Igbt Type: Trench
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.85V @ 15V, 8A
• Current - Collector (ic) (max): 16A
• Power - Max: 99W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Type: IGBT
• Dc Collector Current: 16A
• Collector Emitter Voltage Vces: 600V
• Power Dissipation Pd: 99W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +175°C
• No. Of Pins: 3
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRGB4060DPbF
6
1000
500
450
400
350
300
250
200
150
100
100
50
10
25
20
15
10
Fig. 19- Typical Diode I
0
1
5
0
0
Fig. 21 - Typical Diode E
0
0
Fig. 23- Typ. Capacitance vs. V
10 Ω
22 Ω
47 Ω
100 Ω
V
CC
I
CE
= 400V; V
20
= 8A; T
V
5
GE
T
J
= 0V; f = 1MHz
= 175°C
di F /dt (A/µs)
40
J
I F (A)
V CE (V)
= 175°C
GE
10
500
= 15V;
RR
60
vs. di
RR
Cres
Cies
Coes
15
vs. I
F
/dt
80
F
CE
20
1000
100
1400
1200
1000
800
600
400
200
18
16
14
12
10
V
8
6
4
16
14
12
10
0
CC
8
6
4
2
0
Fig. 22- Typ. V
Fig. 20 - Typical Diode Q
0
8
= 400V; V
0
100Ω
Fig. 24 - Typical Gate Charge vs. V
10
Q G , Total Gate Charge (nC)
V
47 Ω
CC
5
GE
500
=400V, T
I
CE
= 15V; T
di F /dt (A/µs)
GE
12
= 8A, L=600µH
V GE (V)
vs Short Circuit Time
10
22Ω
C
J
14
= 175°C
=25°C
1000
4.0A
300V
10Ω
8.0A
RR
15
16A
16
400V
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1500
18
20
GE
80
70
60
50
40
30
20
10