IXGH12N90C IXYS, IXGH12N90C Datasheet - Page 4

no-image

IXGH12N90C

Manufacturer Part Number
IXGH12N90C
Description
IGBT 24A 900V TO-247AD
Manufacturer
IXYS
Series
HiPerFAST™, Lightspeed 2™r
Datasheet

Specifications of IXGH12N90C

Voltage - Collector Emitter Breakdown (max)
900V
Vce(on) (max) @ Vge, Ic
3V @ 15V, 12A
Current - Collector (ic) (max)
24A
Power - Max
100W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247AD
Vces, (v)
900
Ic25, Tc=25°c, Igbt, (a)
24
Ic90, Tc=90°c, Igbt, (a)
12
Ic110, Tc=110°c, Igbt, (a)
-
Vce(sat), Max, Tj=25°c, Igbt, (v)
3
Tfi, Typ, Tj=25°c, Igbt, (ns)
70
Eoff, Typ, Tj=125°c, Igbt, (mj)
0.7
Rthjc, Max, Igbt, (°c/w)
1.25
If, Tj=110°c, Diode, (a)
-
Rthjc, Max, Diode, (ºc/w)
-
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
0.01
2.0
1.5
1.0
0.5
0.0
0.1
16
14
12
10
10
0.001
8
6
4
2
0
1
0
5
Fig. 7. Dependence of E
T
V
R
J
I
CE
G
C
= 125°C
= 10Ω
= 12A
= 450V
Fig. 9. Gate Charge
10
10
Q
g
- nanocoulombs
I
C
- Amperes
20
15
Fig. 11. Transient Thermal Resistance
30
OFF
20
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
0.01
E
on I
(OFF)
C
40
25
Pulse Width - Seconds
Single pulse
100
Fig. 10. Turn-off Safe Operating Area
0.1
3.0
2.5
2.0
1.5
1.0
0.5
0.0
24
10
1
Fig. 8. Dependence of E
0
0
T
J
T
R
dV/dt < 5V/ns
0.1
= 125°C
J
G
10
= -55 to +125°C
200
= 10Ω
20
400
R
V
G
CE
I
I
C
C
I
C
- Ohms
= 24A
= 12A
= 6A
- Volts
30
600
IXGH 12N90C
IXGX 12N90C
40
OFF
800
on R
50
E
E
E
(OFF)
(OFF)
(OFF)
G
1000
6,534,343
60
1

Related parts for IXGH12N90C