IXGH32N90B2 IXYS, IXGH32N90B2 Datasheet
IXGH32N90B2
Specifications of IXGH32N90B2
Available stocks
Related parts for IXGH32N90B2
IXGH32N90B2 Summary of contents
Page 1
... GE(th CES CE CES ± GES CE(sat) C110 C GE © 2005 IXYS All rights reserved Advance Technical Information IXGH 32N90B2 IXGT 32N90B2 Maximum Ratings 900 = 1 MΩ 900 GE ±20 ± 200 = 10 Ω ≤ 600V 300 -55 ... +150 150 -55 ... +150 300 260 1.13/10Nm/lb.in. TO-247 ...
Page 2
... Note 1: E measured with a DSEP 30-12A ultrafast diode clamp. on Min. Recommended Footprint (Dimensions in inches and mm) IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or more of the following U.S. patents: 4,850,072 4,881,106 ...
Page 3
... Volts CE Fig. 5. Collector-to-Em itter Voltage vs. Gate-to-Em itter voltage 6 5 64A C 32A 5 16A 4.5 4 3.5 3 2 Volts G E © 2005 IXYS All rights reserved º C 240 200 9V 160 120 2.5 3 3.5 4 4.5 º C 1.5 1.4 13V 11V 1.3 9V 1.2 1.1 7V 1.0 ...
Page 4
... C J º º Amperes C Fig. 9. Capacitance 10000 MHz 1000 100 Volts 0.1 0.01 0.1 IXYS reserves the right to change limits, test conditions, and dimensions 100 ies oes res 0 100 Fig. 11. Maxim um Transient Therm al Resistance 1 10 Pulse Width - milliseconds IXGH 32N90B2 IXGT 32N90B2 Fig ...
Page 5
... R - Ohms G Fig. 14. Dependence of Turn-off Energy Loss on Collector Current 16 = 5Ω 15V 125 720V Amperes C Fig. 16. Dependence of Turn-off Energy Loss on Tem perature 16 = 5Ω 15V 720V Degrees Centigrade J © 2005 IXYS All rights reserved 64A 32A 16A º º 64A 32A 16A ...
Page 6
... Sw itching Tim e on Tem perature 400 350 I = 64A, 32A, 16A C 300 250 200 t d(off) R 150 100 Degrees Centigrade J IXYS reserves the right to change limits, test conditions, and dimensions. 400 390 = 15V 40 GE 380 35 370 360 30 350 25 = 32A, 16A 340 20 330 320 ...
Page 7
... IXYS reserves the right to change limits, test conditions, and dimensions without notice. © 2005 IXYS All rights reserved ADVANCE TECHNICAL INFORMATION ...