IRGB20B60PD1PBF International Rectifier, IRGB20B60PD1PBF Datasheet
IRGB20B60PD1PBF
Specifications of IRGB20B60PD1PBF
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IRGB20B60PD1PBF Summary of contents
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... Thermal Resistance Junction-to-Case-(each IGBT) θJC Thermal Resistance Junction-to-Case-(each Diode) R (Diode) θJC Thermal Resistance, Case-to-Sink (flat, greased surface) R θCS Thermal Resistance, Junction-to-Ambient (typical socket mount) R θJA Weight SMPS IGBT IRGB20B60PD1PbF n-channel Parameter e Parameter V = 600V CES V typ. = 2.05V CE(on 15V ...
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... IRGB20B60PD1PbF Electrical Characteristics @ T = 25°C (unless otherwise specified) J Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES ∆V /∆T Temperature Coeff. of Breakdown Voltage (BR)CES J R Internal Gate Resistance G V Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th) ∆V /∆TJ Threshold Voltage temp. coefficient GE(th) gfe ...
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... J www.irf.com 250 200 150 100 50 100 120 140 160 1000 =15V IRGB20B60PD1PbF 100 120 140 160 T C (°C) Fig Power Dissipation vs. Case Temperature 15V VGE = 12V VGE = 10V VGE = 8.0V VGE = 6. (V) Fig Typ. IGBT Output Characteristics T = -40° 80µ 18V ...
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... IRGB20B60PD1PbF 450 400 350 25°C 300 125°C 250 200 150 100 (V) Fig Typ. Transfer Characteristics V = 50V 10µ (V) Fig Typical 125°C J 350 300 250 200 150 100 (A) Fig Typ. Energy Loss vs 125° 200µ 390V Diode clamp used: 8ETH06 (See C.T.3) ...
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... V = 15V 10000 1000 100 400 500 600 700 CE 1.6 1.5 400V 1.4 1.3 1.2 1.1 0.9 0.8 0.7 0 13A IRGB20B60PD1PbF td OFF Ω ) Fig Typ. Switching Time vs 390V 13A Diode clamp used: 8ETH06 (See C.T.3) Cies Coes Cres (V) Fig. 16- Typ. Capacitance vs ...
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... IRGB20B60PD1PbF 200V 125° 25° 100 di /dt - (A/µs) f 200 V = 200V 125° 25°C J 160 4.0A F 120 100 di /dt - (A/µ 1000 100 f 1000 100 1000 200V 125° 25° 8. 4.0A F 1000 di /dt - (A/µ 200V 125° 25° 8. 4.0A F 100 di /dt - (A/µs) ...
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... THERMAL RESPONSE ) 0.001 1E-006 1E-005 Fig 23. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT 0.50 0.20 1 0.10 0.05 0.02 0.1 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.01 0.001 1E-006 1E-005 Fig. 24. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) www.irf.com IRGB20B60PD1PbF τ J τ J τ τ τ ...
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... IRGB20B60PD1PbF 0 1K Fig.C.T.1 - Gate Charge Circuit (turn-off) L PFC diode DUT / DRIVER Rg Fig.C.T.3 - Switching Loss Circuit 8 L VCC 80 V DUT VCC REVERSE RECOVERY CIRCUIT V = 200V R 0.01 Ω 70µH D.U.T. D dif/dt ADJUST IRFP250 G S Fig. C.T.5 - Reverse Recovery Parameter Test Circuit L DUT 480V Rg Fig ...
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... Fig. WF2 - Typ. Turn-on Loss Waveform RRM di(rec)M/dt 0.75 I RRM di / RRM rr (rec)M b RRM Fig. WF3 - Reverse Recovery Waveform and Definitions IRGB20B60PD1PbF 45 40 TEST CURRENT 90% test current 20 10% test current Eon Loss -5 7.85 7.95 8.05 8.15 Time (µ 125°C using Fig. CT.3 ...
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... IRGB20B60PD1PbF Dimensions are shown in millimeters (inches) 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) 4 15.24 (.600) 14.84 (.584 14.09 (.555) 13.47 (.530) 1.40 (.055) 3X 1.15 (.045) 2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH "C " ...
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Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...