IKW20N60T Infineon Technologies, IKW20N60T Datasheet - Page 8

• Manufacturer Part Number: IKW20N60T
• Description: IGBT 600V 40A 166W TO247-3
• Manufacturer: Infineon Technologies
• Series: TrenchStop™r

Specifications of IKW20N60T

• Package / Case: TO-247-3 (Straight Leads)
• Igbt Type: Trench and Field Stop
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.05V @ 15V, 20A
• Current - Collector (ic) (max): 40A
• Power - Max: 166W
• Input Type: Standard
• Mounting Type: Through Hole
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 600 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 175 C
• Continuous Collector Current Ic Max: 40 A
• Minimum Operating Temperature: - 40 C
• Mounting Style: Through Hole
• Switching Frequency: TRENCHSTOP™ 2-20kHz
• Package: TO-247
• Vce (max): 600.0 V
• Ic(max) @ 25°: 40.0 A
• Ic(max) @ 100°: 20.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IKW20N60TXK

Power Semiconductors
Figure 17. Typical gate charge
Figure 19. Typical short circuit collector
300A
250A
200A
150A
100A
15V
10V
5V
0V
50A
0A
0nC
12V
V
(I
current as a function of gate-
emitter voltage
(V
GE
30nC
C
CE
=20 A)
,
GATE
Q
14V
GE
400V, T
,
-
GATE CHARGE
EMITTETR VOLTAGE
60nC
120V
j
16V
150 C)
90nC
480V
18V
120nC
8
TrenchStop
Figure 18. Typical capacitance as a function
Figure 20. Short circuit withstand time as a
12µs
10µs
100pF
8µs
6µs
4µs
2µs
0µs
10pF
1nF
10V
0V
®
V
CE
Series
V
of collector-emitter voltage
(V
function of gate-emitter voltage
(V
T
,
GE
Jmax
COLLECTOR
GE
11V
CE
10V
,
=600V, start at T
=0V, f = 1 MHz)
GATE
<150°C)
-
EMITETR VOLTAGE
12V
20V
-
IKW20N60T
EMITTER VOLTAGE
IKP20N60T
13V
30V
J
Rev. 2.5 Sep. 08
=25°C,
14V
40V
C
C
C
oss
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