IRG4BH20K-L International Rectifier, IRG4BH20K-L Datasheet

IGBT UFAST 1200V 11A TO-262

IRG4BH20K-L

Manufacturer Part Number
IRG4BH20K-L
Description
IGBT UFAST 1200V 11A TO-262
Manufacturer
International Rectifier
Datasheet

Specifications of IRG4BH20K-L

Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
4.3V @ 15V, 5A
Current - Collector (ic) (max)
11A
Power - Max
60W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-262-3 (Straight Leads)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Igbt Type
-
Other names
*IRG4BH20K-L

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRG4BH20K-L
Manufacturer:
IR
Quantity:
12 500
Part Number:
IRG4BH20K-LPBF
Manufacturer:
TI
Quantity:
1 200
INSULATED GATE BIPOLAR TRANSISTOR
Features
Benefits
Absolute Maximum Ratings
Thermal Resistance
www.irf.com
• High short circuit rating optimized for motor control,
• Combines low conduction losses with high
• Latest generation design provides tighter parameter
• Industry standard TO-262 package
• As a Freewheeling Diode we recommend our
• Latest generation 4 IGBT's offer highest power
R
R
R
Wt
V
I
I
I
I
t
V
E
P
P
T
T
V
C
C
CM
LM
sc
t
HEXFRED
Diode and IGBT
minimum EMI / Noise and switching losses in the
switching speed
distribution and higher efficiency than previous
generations
density motor controls possible
CES
GE
ARV
J
STG
sc
D
D
JA
GE
@ T
@ T
JC
CS
@ T
@ T
=10µs, V
= 15V
C
C
C
C
= 25°C
= 100°C
= 25°C
= 100°C
TM
CC
ultrafast, ultrasoft recovery diodes for
= 720V , T
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy ƒ
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Parameter
J
= 125°C,
Parameter

G
n-channel
6 (0.21)
Typ.
0.24
IRG4BH20K-L
–––
–––
E
C
-55 to +150
TO-262
Max.
1200
±20
130
5.0
11
22
22
10
60
24
Short Circuit Rated
V
@V
CE(on) typ.
V
Max.
GE
UltraFast IGBT
–––
–––
2.1
CES
40
= 15V, I
PD -93961
= 1200V
= 3.17V
C
= 5.0A
Units
g (oz)
°C/W
Units
mJ
µs
°C
W
V
A
V
1
8/17/00

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IRG4BH20K-L Summary of contents

Page 1

... Storage Temperature Range STG Thermal Resistance Parameter R Junction-to-Case JC R Case-to-Sink, Flat, Greased Surface CS R Junction-to-Ambient, typical socket mount JA Wt Weight www.irf.com IRG4BH20K n-channel  ‚ -55 to +150 Typ. ––– 0.24 ––– 6 (0.21) PD -93961 Short Circuit Rated UltraFast IGBT ...

Page 2

... IRG4BH20K-L Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES Emitter-to-Collector Breakdown Voltage „ V (BR)ECS Temperature Coeff. of Breakdown Voltage (BR)CES J V Collector-to-Emitter Saturation Voltage CE(ON) V Gate Threshold Voltage GE(th Temperature Coeff. of Threshold Voltage GE(th Forward Transconductance fe I Zero Gate Voltage Collector Current CES ...

Page 3

... Duty cycle: 50 125˚ 90˚ C sink Gate drive as specified Power Dissipation = 15W (Load Current = I of fundamental) RMS 100 10 = 15V Fig Typical Transfer Characteristics IRG4BH20K-L Triangular wave: Clamp voltage: 80% of rated ° 150 C J ° 50V CC 5µs PULSE WIDTH Gate-to-Emitter Voltage (V) ...

Page 4

... IRG4BH20K 100 T , Case Temperature ( C) C Fig Maximum Collector Current vs. Case Temperature 0.50 1 0.20 0.10 0.05 0.1 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.01 0.00001 0.0001 Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 5 15V PULSE WIDTH 4.0 3.0 2.0 -60 -40 -20 125 ...

Page 5

... Fig Typical Switching Losses vs. Gate Resistance www.irf.com 400V CC C SHORTED I = 11A 100 0 Fig Typical Gate Charge vs 0 -60 -40 -20 Fig Typical Switching Losses vs. IRG4BH20K Total Gate Charge (nC) G Gate-to-Emitter Voltage = 50Ohm = 15V = 960V 2 100 120 140 160 ° Junction Temperature ( Junction Temperature ( ° ...

Page 6

... IRG4BH20K-L 5 50Ohm 150 C ° 960V 15V 4.0 GE 3.0 2.0 1.0 0 Collector Current (A) C Fig Typical Switching Losses vs. Collector-to-Emitter Current 6 100 V = 20V 125 SAFE OPERATING AREA Fig Turn-Off SOA o 10 100 1000 10000 , Collector-to-Emitter Voltage (V) www.irf.com ...

Page 7

... V C 90% 10 www.irf.com 960V ‚ Fig. 13b - . ‚ ƒ t=5µ IRG4BH20K-L 960V 25° 480µF 960V Pulsed Collector Current Test Circuit Fig. 14a - Switching Loss Test Circuit * Driver same type as D.U.T 960V Fig. 14b - Switching Loss Waveforms 7 ...

Page 8

... IRG4BH20K-L TO-262 Package Details IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel (0)20 8645 8000 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel (0)838 4630 IR TAIWAN:16 Fl ...

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