IRG4RC10K International Rectifier, IRG4RC10K Datasheet - Page 2

• Manufacturer Part Number: IRG4RC10K
• Description: IGBT UFAST 600V 9A D-PAK
• Manufacturer: International Rectifier

Specifications of IRG4RC10K

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.62V @ 15V, 5A
• Current - Collector (ic) (max): 9A
• Power - Max: 38W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 600V
• Gate To Emitter Voltage (max): ±20V
• Pin Count: 2 +Tab
• Mounting: Surface Mount
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Package: D-Pak
• Circuit: Discrete
• Switching: Hard
• Switching Speed: ULTRAFAST 8-30 kHz
• Vces (v): 600
• Ic @ 25c (a): 9
• Ic @ 100c (a): 5
• Vce(on)@25c Typ (v): 2.39
• Vce(on)@25c Max (v): 2.62
• Ets Typ (mj): 0.26
• Ets Max (mj): 0.32
• Pd @25c (w): 38
• Environmental Options: PbF
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Not Compliant
• Other names: *IRG4RC10K

IRG4RC10K
Notes:
Q
R
Electrical Characteristics @ T
Switching Characteristics @ T
V
V
V
V
g
I
I
Q
Q
Q
t
t
t
t
E
E
E
t
t
t
t
t
E
L
C
C
C
CES
GES
d(on)
r
d(off)
f
sc
d(on)
r
d(off)
f
V
V
fe
E
(BR)CES
(BR)ECS
CE(ON)
GE(th)
on
off
ts
ts
ge
gc
ies
oes
res
g
(BR)CES
2
GE(th)
Repetitive rating; V
max. junction temperature. ( See fig. 13b )
V
(See fig. 13a)
CC
/ T
= 80%(V
/ T
J
J
Parameter
Collector-to-Emitter Breakdown Voltage
Emitter-to-Collector Breakdown Voltage T
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance U
Zero Gate Voltage Collector Current
Gate-to-Emitter Leakage Current
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CES
), V
GE
GE
= 20V, pulse width limited by
= 20V, L = 10µH, R
J
J
= 25°C (unless otherwise specified)
G
= 25°C (unless otherwise specified)
= 100 ,
Min. Typ. Max. Units
Min. Typ. Max. Units
600
3.0
1.2
18
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
10
—
—
—
—
—
—
—
—
—
S
T
U
0.58
2.39 2.62
3.25
2.63
0.16
0.10
0.26 0.32
0.47
190
350
220
-11
2.9
9.8
7.5
7.5
1.8
—
—
—
—
—
—
—
19
11
24
51
—
11
27
67
29
Repetitive rating; pulse width limited by maximum
junction temperature.
Pulse width
Pulse width 5.0µs, single shot.
1000
±100
290
250
6.5
2.0
4.3
29
15
77
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
mV/°C V
V/°C
µA
mJ
mJ
nA
nC
ns
nH
pF
µs
ns
V
V
V
S
80µs; duty factor
V
V
V
V
V
V
V
V
V
I
V
V
T
I
V
Energy losses include "tail"
See Fig. 9,10,14
V
V
T
I
V
Energy losses include "tail"
See Fig. 10,11,14
Measured 5mm from package
V
V
ƒ = 1.0MHz
C
C
C
I
I
I
J
J
GE
GE
GE
CE
CE
CE
GE
GE
GE
GE
CC
GE
GE
CC
GE
GE
GE
CC
C
C
C
= 5.0A
= 5.0A, V
= 5.0A, V
= 25°C
= 150°C,
= 5.0A
= 9.0A
= 5.0A , T
= V
= V
= 50 V, I
= 0V, I
= 0V, I
= 0V, I
= 0V, V
= 0V, V
= 0V, V
= ±20V
= 15V, R
= 15V, R
= 15V, R
= 0V
= 400V
= 15V
= 400V, T
= 30V
GE
GE
Conditions
Conditions
, I
, I
C
C
C
CE
CE
CE
C
C
CC
CC
= 250µA
= 1.0A
= 1.0mA
J
C
= 250µA
= 250µA
G
G
G
= 150°C
= 600V
= 10V, T
= 600V, T
J
= 5.0A
= 480V
= 480V
= 100
= 100
= 100
= 125°C
0.1%.
See Fig.8
See Fig. 7
www.irf.com
J
J
= 25°C
, V
See Fig.2, 5
V
= 150°C
GE
CPK
= 15V
< 500V