IRG4RC10UD International Rectifier, IRG4RC10UD Datasheet - Page 2

• Manufacturer Part Number: IRG4RC10UD
• Description: IGBT W/DIODE 600V 8.5A D-PAK
• Manufacturer: International Rectifier

Specifications of IRG4RC10UD

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.6V @ 15V, 5A
• Current - Collector (ic) (max): 8.5A
• Power - Max: 38W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Igbt Type: -

IRG4RC10UD
Switching Characteristics @ T
Electrical Characteristics @ T
V
V
V
g
I
V
I
Q
Qge
Q
t
t
t
t
E
E
E
t
t
t
t
E
L
C
C
C
t
I
Q
di
GES
CES
d(on)
d(off)
f
d(on)
d(off)
f
rr
r
r
rr
V
fe
E
2
on
off
ts
ts
V
oes
(BR)CES
CE(on)
GE(th)
FM
g
gc
ies
res
rr
(rec)M
(BR)CES
GE(th)
/dt
/ T
/ T
J
J
Collector-to-Emitter Breakdown VoltageS
Temperature Coeff. of Breakdown Voltage —
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance T
Zero Gate Voltage Collector Current
Diode Forward Voltage Drop
Gate-to-Emitter Leakage Current
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Diode Peak Rate of Fall of Recovery
During t
Parameter
Parameter
b
J
J
= 25°C (unless otherwise specified)
= 25°C (unless otherwise specified)
Min. Typ. Max. Units
Min. Typ. Max. Units
600
3.0
2.8
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0.54
2.15
2.61
2.30
0.14
0.12
0.26 0.33
0.45
-8.7
140
250
270
280
235
4.2
1.5
1.4
2.6
5.8
7.5
3.5
2.9
3.7
15
40
16
87
38
18
95
21
28
38
40
70
—
—
—
—
—
1000
±100
250
130
210
105
2.6
6.0
1.8
1.7
4.0
8.7
5.2
6.7
22
42
57
60
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
mV/°C V
V/°C
A/µs T
µA
nA
nC
mJ
mJ
nH
nC
V
V
V
ns
ns
pF
ns
S
A
V
V
I
I
I
V
V
V
V
I
I
V
I
V
V
T
I
V
Energy losses include "tail" and
diode reverse recovery.
See Fig. 9, 10, 18
T
I
V
Energy losses include "tail" and
diode reverse recovery.
Measured 5mm from package
V
V
ƒ = 1.0MHz
T
T
T
T
T
T
T
C
C
C
C
C
C
C
C
J
J
J
J
J
J
J
J
J
J
GE
GE
CE
CE
CE
GE
GE
GE
CC
GE
GE
GE
GE
CC
= 5.0A
= 8.5A
= 5.0A, T
= 4.0A
= 4.0A, T
= 5.0A
= 25°C
= 5.0A, V
= 5.0A, V
= 150°C,
= 25°C See Fig.
= 125°C
= 25°C See Fig.
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
= 0V, I
= 0V, I
= V
= V
= 100V, I
= 0V, V
= 15V, R
= 15V, R
= 0V, V
= ±20V
= 15V
= 0V
= 30V
= 400V
GE
GE
, I
, I
C
C
J
J
CE
CC
CC
C
C
CE
See Fig.
See Fig.
Conditions
Conditions
= 150°C
= 125°C
= 1.0mA
= 250µA
G
G
C
= 250µA
= 250µA
See Fig. 11, 18
= 600V, T
= 480V
= 480V
= 600V
= 100
= 100
= 5.0A
14
15
17
16
See Fig. 8
See Fig. 7
www.irf.com
di/dt = 200A/µs
See Fig. 2, 5
See Fig. 13
V
V
J
I
GE
R
F
= 150°C
= 4.0A
= 200V
= 15V