PMBFJ112,215 NXP Semiconductors, PMBFJ112,215 Datasheet - Page 3

• Manufacturer Part Number: PMBFJ112,215
• Description: MOSFET N-CH 40V 5MA SOT23
• Manufacturer: NXP Semiconductors

Specifications of PMBFJ112,215

• Configuration: Single
• Mounting Style: SMD/SMT
• Transistor Polarity: N-Channel
• Package / Case: SOT-23
• Resistance Drain-source Rds (on): 50 Ohms
• Drain Source Voltage Vds: 40 V
• Gate-source Cutoff Voltage: - 5 V to - 1 V
• Gate-source Breakdown Voltage: - 40 V
• Drain Current (idss At Vgs=0): 5 mA
• Power Dissipation: 300 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 933929740215::PMBFJ112 T/R::PMBFJ112 T/R

Philips Semiconductors
7. Static characteristics
Table 6:
T
8. Dynamic characteristics
Table 7:
[1]
9397 750 13402
Product data sheet
Symbol
I
I
V
V
R
Symbol
C
C
Switching times; see
t
t
t
t
GSS
DSS
r
on
f
off
j
(BR)GSS
GSoff
DSon
iss
rss
= 25 C.
Test conditions for switching times are as follows:
V
V
V
V
DD
GSoff
GSoff
GSoff
= 10 V, V
= 12 V, R
= 7 V, R
= 5 V, R
Static characteristics
Dynamic characteristics
Parameter
input capacitance
feedback capacitance
rise time
turn-on time
fall time
turn-off time
Parameter
gate-source leakage current
drain-source leakage current
gate-source breakdown voltage
gate-source cut-off voltage
drain-source on-state resistance
PMBFJ111
PMBFJ112
PMBFJ113
PMBFJ111
PMBFJ112
PMBFJ113
PMBFJ111
PMBFJ112
PMBFJ113
GS
L
L
= 0 V to V
L
= 1550
= 3150
= 750
Figure 2
GSoff
(PMBFJ111);
(PMBFJ112);
(PMBFJ113).
(all types);
Conditions
V
V
DS
DS
PMBFJ111; PMBFJ112; PMBFJ113
= 0 V; V
= 0 V; V
GS
GS
Rev. 03 — 4 August 2004
= 10 V; f = 1 MHz
= 0 V; f = 1 MHz; T
Conditions
V
V
V
V
I
I
I
I
V
V
V
G
D
D
D
GS
GS
GS
GS
GS
GS
GS
= 1 A; V
= 1 A; V
= 1 A; V
= 1 A; V
= 15 V; V
= 0 V; V
= 0 V; V
= 0 V; V
= 0 V; V
= 0 V; V
= 0 V; V
DS
DS
DS
DS
DS
DS
DS
DS
DS
DS
= 5 V
= 5 V
= 5 V
DS
= 15 V
= 15 V
= 15 V
= 0.1 V
= 0.1 V
= 0.1 V
= 0 V
= 0 V
amb
= 25 C
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
[1]
[1]
[1]
[1]
Min
-
20
5
2
-
-
-
Min
-
-
-
-
-
-
-
N-channel junction FETs
40
10
5
3
Typ
-
-
-
-
-
-
-
-
-
-
-
Typ
6
22
3
6
13
15
35
Max
-
-
-
-
30
50
100
Max
-
28
-
-
-
-
-
1
3
1
0.5
Unit
nA
mA
mA
mA
V
V
V
V
Unit
pF
pF
pF
ns
ns
ns
ns
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