FDMA1027P Fairchild Semiconductor, FDMA1027P Datasheet - Page 4

• Manufacturer Part Number: FDMA1027P
• Description: MOSFET P-CH 20V DUAL MICROFET
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDMA1027P

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 120 mOhm @ 3A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3A
• Vgs(th) (max) @ Id: 1.3V @ 250µA
• Gate Charge (qg) @ Vgs: 6nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 435pF @ 10V
• Power - Max: 800mW
• Mounting Type: Surface Mount
• Package / Case: 6-MLP, 6-MicroFET™
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDMA1027PTR

Typical Characteristics
6
5
4
3
2
1
0
6
5
4
3
2
1
0
1.4
1.3
1.2
1.1
0.9
0.8
0
0
1
Figure 3.
V
-50
V
GS
Figure 1.
DS
-3.5V
Figure 5. Transfer Characteristics
= -4.5V
= -5V
V
I
GS
D
= -3.0A
-25
= -4.5V
0.5
0.5
-V
-V
On-Resistance Variation with
GS
DS
T
-3.0V
, GATE TO SOURCE VOLTAGE (V)
On-Region Characteristics
0
J
, DRAIN-SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (
Temperature
-2.5V
T
1
25
A
1
= 125
o
C
50
1.5
1.5
75
25
-2.0V
o
C
-55
-1.8V
o
100
C
o
C)
2
2
-1.5V
125
150
2.5
2.5
4
Figure 6.
0.28
0.22
0.16
0.04
0.0001
0.1
0.001
0.01
2.6
2.2
1.8
1.4
0.6
0.1
Figure 2.
Figure 4.
10
3
1
with Source Current and Temperature
1
0
0
0
T
V
V
Drain Current and Gate Voltage
A
GS
GS
-1.8V
= 25
Body Diode Forward Voltage Variation
= 0V
= -1.5V
T
o
Gate-to-Source Voltage
A
C
0.2
1
= 125
-V
2
-V
On-Resistance Variation with
On-Resistance Variation with
SD
-2.0V
GS
, BODY DIODE FORWARD VOLTAGE (V)
o
, GATE TO SOURCE VOLTAGE (V)
C
-I
0.4
2
D
T
, DRAIN CURRENT (A)
-2.5V
A
25
4
= 125
o
C
o
C
0.6
3
-3.0V
-55
o
6
C
0.8
4
FDMA1027P Rev. D5
-3.5V
8
1
I
5
D
= -1.5A
-4.5V
1.2
10
6