IRF7756TRPBF International Rectifier, IRF7756TRPBF Datasheet
IRF7756TRPBF
Specifications of IRF7756TRPBF
IRF7756TRPBFTR
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IRF7756TRPBF Summary of contents
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... Lead-Free l Description ® HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve ex- tremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that Inter- provides thedesigner national Rectifier is well known for, with an extremely efficient and reliable device for battery and load management ...
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IRF7756PbF Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V Breakdown Voltage Temp. Coefficient /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward ...
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VGS TOP -7.5V -4.5V -2.5V -1.8V -1.5V -1.2V 10 -1.0V BOTTOM -0.8V 1 -0.8V 0.1 20µs PULSE WIDTH 0.01 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 100 10 ...
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IRF7756PbF 2400 0V MHZ C iss = rss = C gd 2000 C oss = 1600 Ciss 1200 800 Coss ...
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T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 1000 100 D = 0.50 0.20 0.10 10 0.05 0.02 0.01 1 SINGLE PULSE (THERMAL ...
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IRF7756PbF 0.07 0.06 0.05 0. -4.3A 0.03 0.02 1.0 2.0 3.0 -V GS, Gate -to -Source Voltage (V) Fig 11. Typical On-Resistance Vs. Gate Voltage Charge Fig 13a. Basic ...
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Temperature ( °C ) Fig 14. Threshold Voltage Vs. Tempera- ture www.irf.com -250µ 0.001 75 100 125 ...
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IRF7756PbF TSSOP8 Package Outline Dimensions are shown in milimeters (inches @! @ DI9@Y 6SF $ r 7 "Y ppp r 'YÃ iii hhh 8 'ÃTVSA G@69Ã6TTDB H@ UT ...
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G@) UCDTÃDTÃ6IÃDSA''$! 7A GPUÃ8P9@ TSSOP-8 Tape and Reel Information A@@9Ã9DS@8UDPI 'à IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 www.irf.com 6SUÃIVH7@S 96U@Ã8P9@Ã`XX 6TT@H7G`ÃTDU@Ã8P9@ Ã2ÃGrhqA rrÃvqvph à "Å %à IPU@T) ÃÃU6Q@ÃÉÃS@@GÃPVUGDI@Ã8PIAPSHTÃUPÃ@D6#' ÃÉÃ@D6$# Data ...