NTZD3154NT1G ON Semiconductor, NTZD3154NT1G Datasheet - Page 2

• Manufacturer Part Number: NTZD3154NT1G
• Description: MOSFET 2N-CH 20V 540MA SOT-563
• Manufacturer: ON Semiconductor
• Type: Small Signalr

Specifications of NTZD3154NT1G

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 550 mOhm @ 540mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 540mA
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 2.5nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 150pF @ 16V
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-6
• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.55 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 6 V
• Continuous Drain Current: 0.54 A
• Power Dissipation: 250 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 2
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.55Ohm
• Drain-source On-volt: 20V
• Gate-source Voltage (max): ±6V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 6
• Package Type: SOT-563
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTZD3154NT1GOSTR

2. Surface−mounted on FR4 board using 1 in. sq. pad size (Cu. area = 1.127 in sq [1 oz] including traces).
3. Pulse Test: pulse width v 300 ms, duty cycle v2%.
4. Switching characteristics are independent of operating junction temperatures.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 3)
CHARGES AND CAPACITANCES
SWITCHING CHARACTERISTICS, V
DRAIN−SOURCE DIODE CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage Tem-
perature Coefficient
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Forward Diode Voltage
Reverse Recovery Time
Parameter
GS
= V (Note 4)
(T
J
= 25°C unless otherwise noted.)
V
V
V
(BR)DSS
Symbol
Q
V
GS(TH)
R
Q
t
(BR)DSS
t
C
C
d(OFF)
GS(TH)
C
I
I
G(TOT)
Q
Q
d(ON)
DS(on)
V
g
GSS
G(TH)
t
DSS
OSS
RSS
RR
ISS
t
FS
GD
t
SD
GS
r
f
/T
/T
http://onsemi.com
J
J
V
GS
V
V
V
GS
GS
= 0 V, d
GS
2
= 4.5 V, V
= 4.5 V, V
I
V
= 0 V, f = 1.0 MHz, V
V
V
V
V
S
V
V
V
V
V
DS
DS
GS
GS
GS
GS
GS
DS
= 350 mA
GS
GS
ISD
= 16 V
= 0 V, V
= 4.5 V, I
= 2.5 V, I
= 1.8 V, I
Test Condition
= 0 V,
= 10 V, I
= 0 V
= V
= 0 V, I
/d
R
DD
DS
t
G
DS
= 100 A/ms, I
= 10 W
= 10 V, I
= 10 V; I
, I
−
−
GS
D
D
D
D
D
D
= 250 mA
= 540 mA
= 250 mA
= 540 mA
= 500 mA
= 350 mA
= "4.5 V
D
D
DS
= 540 mA,
= 540 mA
S
T
T
T
T
= 16 V
J
J
= 350 mA
J
J
= 125°C
= 125°C
= 25°C
= 25°C
0.45
Min
20
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.35
Typ
2.0
0.4
0.5
0.7
1.0
1.5
0.1
0.2
6.0
4.0
8.0
0.7
0.6
6.5
14
80
13
10
16
−
−
−
−
−
"5.0
Max
0.55
150
1.0
5.0
1.0
0.7
0.9
2.5
1.2
25
20
−
−
−
−
−
−
−
−
−
−
−
−
−
mV/°C
mV/°C
Unit
nC
mA
mA
pF
ns
ns
W
V
V
S
V