FDG6303N Fairchild Semiconductor, FDG6303N Datasheet
FDG6303N
Manufacturer Part Number
FDG6303N
Description
IC FET DGTL N-CHAN DUAL SC70-6
Manufacturer
Fairchild Semiconductor
Datasheet
1.FDG6303N.pdf
(5 pages)
Specifications of FDG6303N
Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
450 mOhm @ 500mA, 4.5V
Drain To Source Voltage (vdss)
25V
Current - Continuous Drain (id) @ 25° C
500mA
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
2.3nC @ 4.5V
Input Capacitance (ciss) @ Vds
50pF @ 10V
Power - Max
300mW
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Configuration
Dual
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.45 Ohm @ 4.5 V
Forward Transconductance Gfs (max / Min)
1.45 S
Drain-source Breakdown Voltage
25 V
Gate-source Breakdown Voltage
- 0.5 V to 8 V
Continuous Drain Current
0.5 A
Power Dissipation
300 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDG6303NTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDG6303N
Manufacturer:
FSC
Quantity:
36 000
Company:
Part Number:
FDG6303N
Manufacturer:
FSC
Quantity:
1 506
Part Number:
FDG6303N
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
FDG6303N-G
Manufacturer:
SANKEN
Quantity:
3 948
Company:
Part Number:
FDG6303N-NL
Manufacturer:
RAYTHEON
Quantity:
3 800
Symbol
V
V
I
P
T
ESD
THERMAL CHARACTERISTICS
R
*
Absolute Maximum Ratings
D
FDG6303N
Dual N-Channel, Digital FET
J
DSS
GSS
D
General Description
,T
These dual N-Channel logic level enhancement mode
field effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This
very high density process is especially tailored to
minimize on-state resistance. This device has been
designed especially for low voltage applications as a
replacement for bipolar digital transistors and small
signal MOSFETs.
JA
Units inside the carrier can be of either orientation and will not affect the functionality of the device.
The pinouts are symmetrical; pin 1 and 4 are interchangeable.
STG
SC70-6
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain/Output Current
Maximum Power Dissipation
Operating and Storage Temperature Range
Electrostatic Discharge Rating MIL-STD-883D
Human Body Model (100 pF / 1500 )
Thermal Resistance, Junction-to-Ambient
SC70-6
D1
SOT-23
G2
S2
- Continuous
- Pulsed
S1
T
A
= 25°C unless otherwise noted
G1
SuperSOT
D2
(Note 1)
TM
-6
Features
SuperSOT
25 V, 0.50 A continuous, 1.5 A peak.
Very low level gate drive requirements allowing direct
operation in 3 V circuits (V
Gate-Source Zener for ESD ruggedness
(>6kV Human Body Model).
Compact industry standard SC70-6 surface
mount package.
R
DS(ON)
TM
R
-8
=0.60
DS(ON)
1 or 4
2 or 5
3 or 6
*
- 0.5 to +8
= 0.45
FDG6303N
-55 to 150
@ V
415
6.0
0.5
1.5
0.3
25
GS
SO-8
@ V
= 2.7 V.
GS(th)
GS
= 4.5 V,
< 1.5 V).
September 2001
4 or 1
6 or 3
5 or 2
*
SOT-223
FDG6303N Rev.F
°C/W
Units
°C
kV
W
V
V
A
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FDG6303N Summary of contents
Page 1
... Human Body Model). Compact industry standard SC70-6 surface mount package. TM SuperSOT -6 SuperSOT 25°C unless otherwise noted A (Note 1) September 2001 4.5 V, DS(ON) GS =0. 2 < 1.5 V). GS(th) SO SOT-223 * FDG6303N 0.5 1.5 0.3 -55 to 150 6.0 415 Units °C kV °C/W FDG6303N Rev.F ...
Page 2
... C/W on minimum pad mounting on FR-4 board in still air. JA Min Typ Max mV 55° 100 0.65 0.8 1 -2.6 mV/ 0.34 0.45 T =125°C 0.55 0.77 J 0.44 0.6 0 1.64 2.3 0.38 0.45 0.25 0.8 1.2 is guaranteed JC FDG6303N Rev.F Units µA µ ...
Page 3
... Drain Current and Gate Voltage 0. 125° 25°C A 1.5 2 2.5 3 3 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125°C J 25°C -55°C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD Variation with Source Current and Temperature. FDG6303N Rev.F 1.2 5 1.2 ...
Page 4
... Transient thermal response will change depending on the circuit board design MHz 0 DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R =415°C 25°C A 0.001 0.01 0 SINGLE PULSE TIME (SEC) Dissipation. R ( =415 °C/W JA P(pk ( Duty Cycle 100 FDG6303N Rev.F C iss C oss C rss 25 200 200 ...
Page 5
CROSSVOLT â â â â â Rev. I2 ...