AO4806 Alpha & Omega Semiconductor Inc, AO4806 Datasheet - Page 2

• Manufacturer Part Number: AO4806
• Description: MOSFET DUAL N-CH 20V 9.4A 8-SOIC
• Manufacturer: Alpha & Omega Semiconductor Inc

Specifications of AO4806

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 14 mOhm @ 9.4A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 9.4A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 17.9nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1810pF @ 10V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 785-1056-2

Alpha & Omega Semiconductor, Ltd.
AO4806
Rev 3 : Sept 2005
A: The value of R
in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Electrical Characteristics (T
Symbol
STATIC PARAMETERS
BV
I
I
BV
V
I
R
g
V
I
DYNAMIC PARAMETERS
C
C
C
R
SWITCHING PARAMETERS
Q
Q
Q
t
t
t
t
t
Q
DSS
GSS
D(ON)
S
D(on)
r
D(off)
f
rr
FS
GS(th)
DS(ON)
SD
iss
oss
rss
g
g
gs
gd
rr
DSS
GSO
θJA
is the sum of the thermal impedence from junction to lead R
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source leakage current
Gate-Source Breakdown Voltage
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
θJA
is measured with the device mounted on 1in
Parameter
J
=25°C unless otherwise noted)
2
FR-4 board with 2oz. Copper, in a still air environment with T
Conditions
I
V
V
V
V
V
V
V
V
V
V
I
V
V
V
V
R
I
I
D
S
F
F
2
DS
DS
DS
DS
GS
GS
GS
GS
GS
DS
GS
GS
GS
GS
=9.4A, dI/dt=100A/µs
=9.4A, dI/dt=100A/µs
=1A
GEN
=250µA, V
FR-4 board with 2oz. Copper, in a still air environment with T
=16V, V
=0V, V
=0V, I
=V
=4.5V, V
=10V, I
=4.5V, I
=2.5V, I
=1.8V, I
=5V, I
=0V, V
=0V, V
=4.5V, V
=10V, V
=3Ω
GS
θJL
and lead to ambient.
G
I
D
D
GS
DS
DS
=±250uA
=9.4A
D
=250µA
D
D
D
GS
DS
=9.4A
GS
DS
DS
=8A
=6A
=4A
=±10V
=10V, f=1MHz
=0V, f=1MHz
=0V
=10V, R
=0V
=5V
=10V, I
D
T
L
=9.4A
=1.1Ω,
T
J
=125°C
J
=55°C
Min
±12
0.5
20
30
1810
0.75
14.3
12.6
16.5
23.4
0.72
17.9
Typ
232
200
1.6
1.5
4.7
3.3
5.9
7.7
8.6
11
37
44
22
A
=25°C. The SOA
A
=25°C. The value
Max
±10
10
25
14
17
16
22
30
1
1
3
Units
mΩ
mΩ
mΩ
mΩ
µA
µA
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
V
V
V
A
S
V
A
Ω