SI4559ADY-T1-E3 Vishay, SI4559ADY-T1-E3 Datasheet - Page 9

• Manufacturer Part Number: SI4559ADY-T1-E3
• Description: MOSFET N/P-CH 60V 8-SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4559ADY-T1-E3

• Transistor Polarity: N-Channel
• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 58 mOhm @ 4.3A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 4.3A, 3A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 10V
• Input Capacitance (ciss) @ Vds: 665pF @ 15V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Resistance Drain-source Rds (on): 0.058 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 4.3 A @ N Channel or 3 A @ P Channel
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 4.5A
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 46mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 1V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI4559ADY-T1-E3TR

P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 73624
S09-0393-Rev. B, 09-Mar-09
- 0.2
- 0.4
20
10
0.6
0.4
0.2
0.0
1
0.0
- 50
Source-Drain Diode Forward Voltage
- 25
0.2
V
SD
0
- Source-to-Drain Voltage (V)
I
T
0.4
Threshold Voltage
D
J
= 250 µA
- Temperature (°C)
25
T
J
0.6
= 150 °C
50
75
0.8
0.01
100
0.1
10
100
T
1
0.1
J
= 25 °C
1.0
* V
Safe Operating Area, Junction-to-Case
125
GS
by R
Limited
>
Limited
I
D(on)
V
minimum V
1.2
DS(on)
150
DS
Single Pulse
T
- Drain-to-Source Voltage (V)
A
*
= 25 °C
1
GS
at which R
BVDSS Limited
I
DM
DS(on)
10
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
50
40
30
20
10
Limited
0
10
is specified
0
-3
On-Resistance vs. Gate-to-Source Voltage
10
-2
2
100
V
P(t) = 0.0001
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
DC
GS
Single Pulse Power
- Gate-to-Source Voltage (V)
10
-1
4
Time (s)
I
D
= 3.1 A
Vishay Siliconix
1
Si4559ADY
6
10
www.vishay.com
8
100
600
10
9