FDG6316P Fairchild Semiconductor, FDG6316P Datasheet
FDG6316P
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FDG6316P Summary of contents
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... STG Thermal Characteristics Thermal Resistance, Junction-to-Ambient R θJA Package Marking and Ordering Information Device Marking Device .16 FDG6316P ©2011 Fairchild Semiconductor Corporation FDG6316P Rev.D1 MOSFET General Description = –4 This P-Channel = –2.5 V Fairchild’s advanced low voltage PowerTrench process has been optimized for battery power management = – ...
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... R is guaranteed by design while R θJC PCB on still air environment 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% ©2011 Fairchild Semiconductor Corporation FDG6316P Rev. 25°C unless otherwise noted A Test Conditions = –250 µ ...
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... Figure 3. On-Resistance Variation with Temperature -5V DS 1.5 1 0 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics. ©2011 Fairchild Semiconductor Corporation FDG6316P Rev.D1 3 2.6 2.2 1.8 -1.5V 1 2.5 3 3.5 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.75 0.65 ...
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... DS Figure 9. Maximum Safe Operating Area 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 0.0001 0.001 Figure 11. Transient Thermal Response Curve. ©2011 Fairchild Semiconductor Corporation FDG6316P Rev.D1 250 V = -4V -6V DS 200 -8V 150 100 Figure 8. Capacitance Characteristics. 10 100 µ s ...
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... Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2011 Fairchild Semiconductor Corporation FDG6316P Rev.D1 ® PowerTrench ® PowerXS™ SM Programmable Active Droop™ ® QFET QS™ Quiet Series™ RapidConfigure™ ...