FDD3510H Fairchild Semiconductor, FDD3510H Datasheet - Page 9

• Manufacturer Part Number: FDD3510H
• Description: IC MOSFET DUAL N/P 80V DPAK-4
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDD3510H

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 80 mOhm @ 4.3A, 10V
• Drain To Source Voltage (vdss): 80V
• Current - Continuous Drain (id) @ 25° C: 4.3A, 2.8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 18nC @ 10V
• Input Capacitance (ciss) @ Vds: 800pF @ 40V
• Power - Max: 1.3W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (4 leads + tab)
• Configuration: Dual Common Drain Dual Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.08 Ohm @ 10 V @ Q1
• Drain-source Breakdown Voltage: 80 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4.3 A @ Q1 or 2.8 A @ Q2
• Power Dissipation: 3100 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDD3510HTR

FDD3510H Rev.C
Typical Characteristics (Q2 P-Channel)
0.001
0.001
0.01
0.01
0.1
0.1
2
1
2
1
10
10
-6
-4
D = 0.5
DUTY CYCLE-DESCENDING ORDER
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
R
θ
JC
10
= 3.9
-3
10
-5
o
C/W
Figure 27. Transient Thermal Response Curve
SINGLE PULSE
R
(
Note 1b
Figure 28. Transient Thermal Response Curve
θ
JA
= 96
10
)
o
C/W
-2
10
-4
t, RECTANGULAR PULSE DURATION (sec)
t, RECTANGULAR PULSE DURATION (s)
10
T
-1
J
= 25°C unless otherwise noted
9
10
-3
1
10
-2
NOTES:
DUTY FACTOR: D = t
PEAK T
NOTES:
DUTY FACTOR: D = t
PEAK T
10
J
J
= P
= P
DM
DM
x Z
x Z
P
P
θJC
θJA
DM
DM
10
1
1
/t
/t
x R
x R
2
-1
2
100
θJC
θJA
t
t
1
1
+ T
+ T
t
t
2
2
A
C
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1