STS2DNF30L STMicroelectronics, STS2DNF30L Datasheet

MOSFET 2N-CH 30V 3A 8SOIC

STS2DNF30L

Manufacturer Part Number
STS2DNF30L
Description
MOSFET 2N-CH 30V 3A 8SOIC
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheet

Specifications of STS2DNF30L

Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
110 mOhm @ 1A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
3A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
4.5nC @ 10V
Input Capacitance (ciss) @ Vds
121pF @ 25V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Features
Application
Description
This Power MOSFET is the latest development of
STMicroelectronics unique "single feature size"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility.
Table 1.
November 2009
STS2DNF30L
Standard outline for easy automated surface
mount assembly
Low threshold gate drive
Switching applications
STS2DNF30L
Type
Order code
Device summary
V
30V
DSS
R
DS(on)
<0.11Ω
Marking
2DF30L
max
Doc ID 7200 Rev 7
3A
Dual n-channel 30 V, 0.09 Ω , 3 A SO-8
I
D
Figure 1.
STripFET™ Power MOSFET
Package
SO-8
Internal schematic diagram
STS2DNF30L
S0-8
Tape and reel
Packaging
www.st.com
1/12
12

Related parts for STS2DNF30L

STS2DNF30L Summary of contents

Page 1

... Table 1. Device summary Order code STS2DNF30L November 2009 Dual n-channel 30 V, 0.09 Ω SO-8 STripFET™ Power MOSFET max I DS(on) D <0.11Ω 3A Figure 1. Marking 2DF30L Doc ID 7200 Rev 7 STS2DNF30L S0-8 Internal schematic diagram Package Packaging SO-8 Tape and reel 1/12 www.st.com 12 ...

Page 2

... Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/ Doc ID 7200 Rev 7 STS2DNF30L ...

Page 3

... STS2DNF30L 1 Electrical ratings Table 2. Absolute maximum ratings Symbol V Drain-source voltage ( Gate- source voltage GS I Drain current (continuous Drain current (continuous (1) I Drain current (pulsed) DM Total dissipation TOT Total dissipation Storage temperature stg T Max. operating junction temperature j 1. Pulse width limited by safe operating area Table 3 ...

Page 4

... DS D(on) I =2. 25V MHz 24V 10V GS Parameter Test conditions V = =4.7Ω (see Figure 13 =4.7Ω (see Figure 13) Doc ID 7200 Rev 7 STS2DNF30L Min. Typ 250µ 0.13 Min. Typ. Max. DS(on)max - 2.5 121 4 1.7 - 0.9 Min. Typ. =1A, ...

Page 5

... STS2DNF30L Table 7. Source drain diode Symbol I Source-drain current SD (1) I Source-drain current (pulsed) SDM (2) V Forward on voltage SD t Reverse recovery time rr Q Reverse recovery charge rr I Reverse recovery current RRM 1. Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% ...

Page 6

... Electrical characteristics 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 4. Output characteristics Figure 6. Transconductance 6/12 Figure 3. Thermal impedance Figure 5. Transfer characteristics Figure 7. Static drain-source on resistance Doc ID 7200 Rev 7 STS2DNF30L ...

Page 7

... STS2DNF30L Figure 8. Gate charge vs. gate-source voltage Figure 9. Figure 10. Normalized gate threshold voltage vs. temperature Figure 12. Source-drain diode forward characteristics Capacitance variations Figure 11. Normalized on resistance vs. temperature Doc ID 7200 Rev 7 Electrical characteristics 7/12 ...

Page 8

... Figure 13. Switching times test circuit for resistive load Figure 15. Test circuit for inductive load switching and diode recovery times Figure 17. Unclamped inductive waveform 8/12 Figure 14. Gate charge test circuit Figure 16. Unclamped inductive load test circuit Figure 18. Switching time waveform Doc ID 7200 Rev 7 STS2DNF30L ...

Page 9

... STS2DNF30L 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK trademark. Doc ID 7200 Rev 7 Package mechanical data ® 9/12 ...

Page 10

... Doc ID 7200 Rev 7 STS2DNF30L inch MIN. TYP. 0.003 0.025 0.013 0.007 0.010 45 (typ.) 0.188 0.228 0.050 0.150 0.14 0.015 8 (max.) MAX. 0.068 0.009 ...

Page 11

... STS2DNF30L 5 Revision history Table 8. Document revision history Date 21-Jun-2004 10-Nov-2006 31-Jan-2007 03-May-2007 03-Nov-2009 Revision 3 Complete document. 4 The document has been reformatted. Table 5 Typo mistake Max value has been changed. DS(on) Table 7 Updated marking in Doc ID 7200 Rev 7 Revision history Changes 2. 1. 11/12 ...

Page 12

... Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 12/12 Please Read Carefully: © 2009 STMicroelectronics - All rights reserved STMicroelectronics group of companies www.st.com Doc ID 7200 Rev 7 STS2DNF30L ...

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