IRF7309TRPBF International Rectifier, IRF7309TRPBF Datasheet - Page 9

• Manufacturer Part Number: IRF7309TRPBF
• Description: MOSFET N+P 30V 3A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7309TRPBF

• Fet Type: N and P-Channel
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 50 mOhm @ 2.4A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 4A, 3A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 25nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 520pF @ 15V
• Power - Max: 1.4W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 80 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 4 A
• Power Dissipation: 1.4 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 16.7 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7309PBFTR

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Re-Applied
Voltage
Reverse
Recovery
Current
+
-
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
Fig 24.
GS
P.W.
SD
DS
Waveform
Waveform
Ripple ≤ 5%
Body Diode
Period
Body Diode Forward
+
-
•
•
•
Diode Recovery
SD
Current
dv/dt
Forward Drop
•
•
•
di/dt
D =
-
G
Period
P.W.
+
V
V
I
SD
GS
DD
=10V
+
-
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