IRF7351TRPBF International Rectifier, IRF7351TRPBF Datasheet

no-image

IRF7351TRPBF

Manufacturer Part Number
IRF7351TRPBF
Description
MOSFET N-CH DUAL 60V 8A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF7351TRPBF

Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
17.8 mOhm @ 8A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
8A
Vgs(th) (max) @ Id
4V @ 50µA
Gate Charge (qg) @ Vgs
36nC @ 10V
Input Capacitance (ciss) @ Vds
1330pF @ 30V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Dual
Transistor Polarity
Dual N-Channel
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
8 A
Power Dissipation
2 W
Mounting Style
SMD/SMT
Gate Charge Qg
24 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRF7351TRPBFTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7351TRPBF
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRF7351TRPBF
0
Company:
Part Number:
IRF7351TRPBF
Quantity:
9 000
Company:
Part Number:
IRF7351TRPBF
Quantity:
36 000
Company:
Part Number:
IRF7351TRPBF
Quantity:
8 700
Applications
l
l
Benefits
l
l
l
Notes  through
www.irf.com
V
V
I
I
I
P
P
T
T
R
R
Absolute Maximum Ratings
Thermal Resistance
D
D
DM
J
STG
DS
GS
D
D
θJL
θJA
@ T
@ T
and Current
@T
@T
Synchronous Rectifier MOSFET for
Isolated DC-DC Converters
Low Power Motor Drive Systems
Ultra-Low Gate Impedance
Fully Characterized Avalanche Voltage
20V V
A
A
A
A
= 25°C
= 70°C
= 25°C
= 70°C
GS
Max. Gate Rating
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Junction-to-Drain Lead
Junction-to-Ambient
are on page 10
Parameter
Parameter
f
f
fg
g
GS
GS
@ 10V
@ 10V
V
G2
G1
S2
S1
60V 17.8m Ω @V
DSS
1
2
3
4
Top View
Typ.
–––
–––
R
-55 to + 150
HEXFET Power MOSFET
DS(on)
8
7
6
5
IRF7351PbF
Max.
0.016
1.28
± 20
8.0
6.4
2.0
60
64
D1
D1
D2
D2
max
GS
Max.
62.5
= 10V
20
SO-8
Qg (typ.)
24nC
Units
Units
W/°C
°C/W
11/18/09
°C
W
V
A
1

Related parts for IRF7351TRPBF

IRF7351TRPBF Summary of contents

Page 1

Applications Synchronous Rectifier MOSFET for l Isolated DC-DC Converters Low Power Motor Drive Systems l Benefits Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage l and Current 20V V Max. Gate Rating l GS Absolute Maximum Ratings V Drain-to-Source Voltage ...

Page 2

Static @ T = 25°C (unless otherwise specified) J Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V Gate Threshold Voltage Coefficient GS(th) I ...

Page 3

PULSE WIDTH Tj = 25°C 3.8V 0.1 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 150° 25V ≤ 60µs PULSE ...

Page 4

0V MHZ C iss = SHORTED C rss = oss = 10000 C iss 1000 C oss ...

Page 5

Case Temperature (°C) Fig 9. Maximum Drain Current vs. Case Temperature 100 D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 0.1 0.01 0.001 ...

Page 6

25° GS, Gate -to -Source Voltage (V) Fig 12. On-Resistance vs. Gate Voltage D.U 20V 0.01 Ω t ...

Page 7

D.U.T + ƒ • • - • + ‚ -  • • • SD • Fig 16. Current Regulator Same Type as D.U.T. 50KΩ .2µF 12V .3µ 3mA I G Current Sampling Resistors Fig 17a. Gate Charge ...

Page 8

Power MOSFET Selection for Non-Isolated DC/DC Converters Control FET loss conduction switching This can be expanded and approximated by × loss rms ds(on ) ⎛ ⎞ ...

Page 9

SO-8 Package Outline (Mosfet & Fetky) Dimensions are shown in milimeters (inches & !$Ãb dà ! " YÃi !$Ãb dà IPU@T) ÃÃ9DH@ITDPIDIBÃÉÃUPG@S6I8DIBÃQ@SÃ6TH@Ã` #$H ...

Page 10

SO-8 Tape and Reel NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Notes:  ...

Related keywords