IRF7324TRPBF International Rectifier, IRF7324TRPBF Datasheet

MOSFET 2P-CH 20V 9A 8-SOIC

IRF7324TRPBF

Manufacturer Part Number
IRF7324TRPBF
Description
MOSFET 2P-CH 20V 9A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF7324TRPBF.pdf (8 pages)

Specifications of IRF7324TRPBF

Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
18 mOhm @ 9A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
9A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
63nC @ 5V
Input Capacitance (ciss) @ Vds
2940pF @ 15V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Channel Type
P
Current, Drain
–9 A
Package Type
SO-8
Polarization
P-Channel
Power Dissipation
2 W
Resistance, Drain To Source On
0.018 Ohm
Resistance, Thermal, Junction To Case
62.5 °C/W
Temperature, Operating, Minimum
-55 °C
Voltage, Drain To Source
–20 V
Voltage, Gate To Source
±12 V
Configuration
Dual
Transistor Polarity
Dual P-Channel
Drain-source Breakdown Voltage
- 20 V
Gate-source Breakdown Voltage
12 V
Continuous Drain Current
- 9 A
Mounting Style
SMD/SMT
Gate Charge Qg
42 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRF7324PBFTR
IRF7324TRPBF
IRF7324TRPBFTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
IRF7324TRPBF
Manufacturer:
International Rectifier
Quantity:
30 807
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
IRF7324TRPBF
Manufacturer:
IR
Quantity:
20 000
Company:
H&T Electronics H&T Electronics
Part Number:
IRF7324TRPBF
Quantity:
15 989
●
●
●
●
●
●
●
Description
Absolute Maximum Ratings
Thermal Resistance
New trench HEXFET
Rectifier utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area.
This benefit, combined with the ruggedized device design
that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient and
reliable device for use in battery and load management
applications.
www.irf.com
V
I
I
I
P
P
V
T
R
D
D
DM
Trench Technology
Ultra Low On-Resistance
Available in Tape & Reel
2.5V Rated
Low Profile (<1.1mm)
Lead-Free
J
DS
D
D
GS
θJA
Dual P-Channel MOSFET
@ T
@ T
, T
@T
@T
STG
A
A
A
A
= 25°C
= 70°C
= 25°C
= 70°C
Drain-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Junction and Storage Temperature Range
Parameter
Maximum Junction-to-Ambient
Linear Derating Factor
®
Gate-to-Source Voltage
Power MOSFETs from International
Parameter

GS
GS
ƒ
ƒ
ƒ
@ -4.5V
@ -4.5V
Max.
G2
G1
S2
S1
1
2
3
4
Top View
HEXFET
8
7
6
5
IRF7324PbF
-55 to + 150
62.5
D1
D1
D2
D2
Max.
-9.0
-7.1
Units
-20
-71
2.0
1.3
± 12
SO-8
16
®
R
Power MOSFET
DS(on)
V
DSS
= 0.018Ω
= -20V
mW/°C
Units
°C/W
°C
W
W
V
A
V
1

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IRF7324TRPBF Summary of contents

Page 1

Trench Technology ● Ultra Low On-Resistance ● Dual P-Channel MOSFET ● Low Profile (<1.1mm) ● Available in Tape & Reel ● 2.5V Rated ● Lead-Free ● Description ® New trench HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques ...

Page 2

IRF7324PbF Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient ∆V /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward ...

Page 3

VGS TOP -4.5V -3.5V -2.5V -2.0V -1.5V 100 -1.3V -1.0V BOTTOM -0.75V 10 1 0.1 -0.75V 20µs PULSE WIDTH 0.01 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 100 ...

Page 4

IRF7324PbF 5000 1MHz iss rss 4000 oss iss 3000 2000 1000 C oss C ...

Page 5

T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 100 D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 SINGLE PULSE (THERMAL RESPONSE) ...

Page 6

IRF7324PbF 0.025 0.020 -9.0A 0.015 0.010 2.0 2.5 3.0 3.5 V GS, Gate -to -Source Voltage (V) Fig 12. Typical On-Resistance Vs. Gate Voltage Charge Fig 14a. Basic ...

Page 7

SO-8 Package Outline Dimensions are shown in milimeters (inches 0.25 [.010 NOT DIMENS IONING & T OLERANCING PER AS ME ...

Page 8

IRF7324PbF SO-8 Tape and Reel Dimensions are shown in milimeters (inches) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE ...

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