NTUD3169CZT5G ON Semiconductor, NTUD3169CZT5G Datasheet

MOSFET N/P-CH 20V SOT-963

NTUD3169CZT5G

Manufacturer Part Number
NTUD3169CZT5G
Description
MOSFET N/P-CH 20V SOT-963
Manufacturer
ON Semiconductor
Datasheet

Specifications of NTUD3169CZT5G

Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
1.5 Ohm @ 100mA, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
220mA, 200mA
Vgs(th) (max) @ Id
1V @ 250µA
Input Capacitance (ciss) @ Vds
12.5pF @ 15V
Power - Max
125mW
Mounting Type
Surface Mount
Package / Case
SOT-963
Configuration
Dual
Transistor Polarity
N and P-Channel
Resistance Drain-source Rds (on)
1.5 Ohm @ 4.5 V @ N Channel
Forward Transconductance Gfs (max / Min)
0.48 S, 0.35 S
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
0.22 A @ N Channel or 0.2 A @ P Channel
Power Dissipation
200 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

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Manufacturer:
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NTUD3169CZ
Small Signal MOSFET
20 V, 220 mA / −200 mA, Complementary,
1.0 x 1.0 mm SOT−963 Package
Features
Applications
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using the minimum recommended pad size,
2. Pulse Test: pulse width v300 ms, duty cycle v2%
© Semiconductor Components Industries, LLC, 2008
August, 2008 − Rev. 0
MAXIMUM RATINGS
Drain−to−Source Voltage
Gate−to−Source Voltage
N−Channel
Continuous Drain
Current (Note 1)
P−Channel
Continuous Drain
Current (Note 1)
Power Dissipation
Pulsed Drain Current
Operating Junction and Storage Temperature
Source Current (Body Diode) (Note 2)
Lead Temperature for Soldering Purposes
Package
Thin Environments such as Portable Electronics.
Complementary MOSFET Device
Offers a Low R
1.5 V Gate Voltage Rating
Ultra Thin Profile (< 0.5 mm) Allows It to Fit Easily into Extremely
This is a Pb−Free Device
Load Switch with Level Shift
Optimized for Power Management in Ultra Portable Equipment
1 oz. Cu.
(Note 1)
(1/8” from case for 10 s)
Parameter
DS(on)
N−Channel
P−Channel
(T
t v 5 s
t v 5 s
t v 5 s
Steady
Steady
Steady
Solution in the Ultra Small 1.0x1.0 mm
J
State
State
State
= 25°C unless otherwise specified)
T
T
T
T
T
T
T
t
p
A
A
A
A
A
A
A
= 10 ms
= 25°C
= 85°C
= 25°C
= 25°C
= 85°C
= 25°C
= 25°C
Symbol
V
T
V
I
T
P
DSS
DM
STG
T
I
I
GS
D
S
D
J
L
,
−55 to
Value
−200
−140
−250
−600
220
160
280
125
200
800
150
200
260
20
±8
1
Unit
mW
mA
mA
mA
°C
°C
V
V
†For information on tape and reel specifications,
NTUD3169CZT5G
N−Channel
P−Channel
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
V
(BR)DSS
20 V
20 V
CASE 527AD
G
D
S
Device
SOT−963
1
1
2
2
M
G
ORDERING INFORMATION
1
2
3
http://onsemi.com
PINOUT: SOT−963
5.0 W @ −4.5 V
6.0 W @ −2.5 V
7.0 W @ −1.8 V
10 W @ −1.5 V
1.5 W @ 4.5 V
2.0 W @ 2.5 V
3.0 W @ 1.8 V
4.5 W @ 1.5 V
= Specific Device Code
= Date Code
= Pb−Free Package
R
DS(on)
Top View
(Pb−Free)
SOT−963
Package
Publication Order Number:
Max
MARKING
DIAGRAM
1
NTUD3169CZ/D
6
5
4
Tape & Reel
2 M G
Shipping
8000 /
I
0.22 A
−0.2 A
D
Max
D
G
S
2
1
2

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NTUD3169CZT5G Summary of contents

Page 1

... J T 150 STG 200 mA S 260 ° Device NTUD3169CZT5G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 1 http://onsemi.com R Max I Max DS(on 4 2 ...

Page 2

THERMAL RESISTANCE RATINGS Parameter Junction−to−Ambient – Steady State, Minimum Pad (Note 3) Junction−to−Ambient – (Note 3) 3. Surface−mounted on FR4 board using the minimum recommended pad size, 1 oz. Cu. ELECTRICAL CHARACTERISTICS (T Parameter OFF CHARACTERISTICS ...

Page 3

ELECTRICAL CHARACTERISTICS (T Parameter SWITCHING CHARACTERISTICS 4.5 V (Note 4) GS Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time 4. Switching characteristics are independent of operating ...

Page 4

TYPICAL CHARACTERISTICS (N−CHANNEL) 0 thru 1.8 V 0.3 0.2 0 DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 1. On−Region Characteristics ...

Page 5

TYPICAL CHARACTERISTICS (N−CHANNEL) 20.0 17.5 C iss 15.0 12.5 10.0 C oss 7.50 5.00 C rss 2. GATE−TO−SOURCE AND DRAIN−TO−SOURCE VOLTAGE (V) Figure 7. Capacitance Variation 0.200 V 0.175 T 0.150 0.125 0.100 0.075 0.050 0.025 ...

Page 6

TYPICAL CHARACTERISTICS (P−CHANNEL) 0.36 2 2.2 thru 0.28 0.24 0.20 0.16 0.12 0.08 0. DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 10. On−Region Characteristics ...

Page 7

TYPICAL CHARACTERISTICS (P−CHANNEL iss oss rss DRAIN−TO−SOURCE VOLTAGE (V) Figure 16. Capacitance Variation 0. 0. 0.14 ...

Page 8

... C *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “ ...

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