ZXMN3A04DN8TC Diodes Zetex, ZXMN3A04DN8TC Datasheet

MOSFET DUAL N-CHAN 30V 8SOIC

ZXMN3A04DN8TC

Manufacturer Part Number
ZXMN3A04DN8TC
Description
MOSFET DUAL N-CHAN 30V 8SOIC
Manufacturer
Diodes Zetex
Datasheet

Specifications of ZXMN3A04DN8TC

Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
20 mOhm @ 12.6A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
6.5A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
36.8nC @ 10V
Input Capacitance (ciss) @ Vds
1890pF @ 15V
Power - Max
1.25W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ZXMN3A04DN8TC
Manufacturer:
D1ODES
Quantity:
20 000
DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V
DESCRIPTION
This new generation of TRENCH MOSFETs from Zetex utilizes a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
FEATURES
APPLICATIONS
ORDERING INFORMATION
DEVICE MARKING
ZXMN
3A04D
ISSUE 2 - OCTOBER 2002
DEVICE
ZXMN3A04DN8TA
ZXMN3A04DN8TC
(BR)DSS
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
Low profile SOIC package
DC - DC Converters
Power Management Functions
Disconnect switches
Motor control
= 30V; R
DS(ON)
REEL
13’‘
7
= 0.02
’‘
WIDTH
12mm
12mm
TAPE
; I
D
= 8.5A
QUANTITY
2500 units
PER REEL
500 units
1
ZXMN3A04DN8
PINOUT
Top view
SO8

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ZXMN3A04DN8TC Summary of contents

Page 1

... Low profile SOIC package APPLICATIONS Converters Power Management Functions Disconnect switches Motor control ORDERING INFORMATION DEVICE REEL TAPE WIDTH ZXMN3A04DN8TA 7 12mm ’‘ ZXMN3A04DN8TC 13’‘ 12mm DEVICE MARKING ZXMN 3A04D ISSUE 2 - OCTOBER 2002 = 8.5A D QUANTITY PER REEL 500 units 2500 units 1 ZXMN3A04DN8 ...

Page 2

ZXMN3A04DN8 ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Gate Source Voltage Continuous Drain Current (V =10V =10V =10V Pulsed Drain Current (c) Continuous Source Current (Body Diode) (b) Pulsed Source Current (Body Diode)(c) ...

Page 3

ISSUE 2 - OCTOBER 2002 ZXMN3A04DN8 CHARACTERISTICS 3 ...

Page 4

ZXMN3A04DN8 ELECTRICAL CHARACTERISTICS PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State Resistance (1) Forward Transconductance (3) DYNAMIC (3) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING(2) (3) Turn-On Delay Time ...

Page 5

ISSUE 2 - OCTOBER 2002 TYPICAL CHARACTERISTICS 5 ZXMN3A04DN8 ...

Page 6

ZXMN3A04DN8 TYPICAL CHARACTERISTICS 6 ISSUE 2 - OCTOBER 2002 ...

Page 7

PACKAGE OUTLINE CONTROLLING DIMENSIONS ARE IN INCHES APPROX IN MILLIMETRES © Zetex plc 2002 Europe Zetex plc Zetex GmbH Fields New Road Streitfeldstraße 19 Chadderton D-81673 München Oldham, OL9 8NP United Kingdom Germany Telephone (44) 161 622 4422 Telefon: (49) ...

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