USB10H Fairchild Semiconductor, USB10H Datasheet - Page 13

• Manufacturer Part Number: USB10H
• Description: MOSFET P-CH DUAL 20V SSOT6
• Manufacturer: Fairchild Semiconductor

Specifications of USB10H

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 170 mOhm @ 1.9A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 1.9A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 4.2nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 441pF @ 10V
• Power - Max: 700mW
• Mounting Type: Surface Mount
• Package / Case: 6-SSOT, SuperSOT-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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MicroFET™
FDM3300NZ
FDM606P
MicroFET N-Channel
MicroFET P-Channel
Products
Min. (V)
BV
-20
20
DSS
Dual Common Drain
Config.
Single
10V
–
–
R
DS(ON)
0.023
0.026
4.5V
Max (Ω) @ V
2-8
0.028
0.033
2.5V
GS
=
Bold = New Products (introduced January 2003 or later)
1.8V
0.052
–
Discrete Power Products –
Q
@V
g
Typ. (nC)
GS
12
20
= 5V
I
D
6.8
10
(A)
MOSFETs
P
D
1.92
2.5
(W)