FDZ2553NZ Fairchild Semiconductor, FDZ2553NZ Datasheet

FDZ2553NZ

Manufacturer Part Number

FDZ2553NZ

Description

MOSFET N-CH 20V 9.6A BGA

Manufacturer

Fairchild Semiconductor

Series

PowerTrench®r

Datasheet

1.FDZ2553NZ.pdf (6 pages)

Specifications of FDZ2553NZ

Fet Type

2 N-Channel (Dual)

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

14 mOhm @ 9.6A, 4.5V

Drain To Source Voltage (vdss)

20V

Current - Continuous Drain (id) @ 25° C

9.6A

Vgs(th) (max) @ Id

1.5V @ 250µA

Gate Charge (qg) @ Vgs

18nC @ 5V

Input Capacitance (ciss) @ Vds

1240pF @ 10V

Power - Max

2.1W

Mounting Type

Surface Mount

Package / Case

12-BGA (18 pos)

Configuration

Dual Common Drain

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

0.012 Ohms

Forward Transconductance Gfs (max / Min)

45 S

Drain-source Breakdown Voltage

20 V

Gate-source Breakdown Voltage

+/- 12 V

Continuous Drain Current

9.6 A

Power Dissipation

2.1 W

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

FDZ2553NZ

Manufacturer:

ZETEX

Quantity:

Company:

BOSTOCK HK LIMITED

Part Number:

FDZ2553NZ

Manufacturer:

Fairchild Semiconductor

Quantity:

10 000

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FDZ2553NZ

General Description

Combining

PowerTrench

packaging, the FDZ2553N minimizes both PCB space

and R

embodies a breakthrough in packaging technology

which enables the device to combine excellent thermal

transfer characteristics, high current handling capability,

ultra-low profile packaging, low gate charge, and low

Applications

Monolithic Common Drain N-Channel 2.5V Specified PowerTrench BGA MOSFET

2003 Fairchild Semiconductor Corporation

DS(ON)

Absolute Maximum Ratings

Symbol

Thermal Characteristics

Package Marking and Ordering Information

Battery management

Load switch

Battery protection

DSS

GSS

, T

J C

Device Marking

Pin 1

STG

DS(ON)

2553NZ

Fairchild’s

Bottom

Drain-Source Voltage

Gate-Source Voltage

Drain Current

Power Dissipation (Steady State)

Operating and Storage Junction Temperature Range

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Ball

Thermal Resistance, Junction-to-Case

process

This common drain BGA MOSFET

advanced

with

– Continuous

– Pulsed

FDZ2553NZ

state-of-the-art

Parameter

Device

2.5V

Pin 1

specified

=25

BGA

Top

C unless other wise noted

Reel Size

7’’

(Note 1a)

(Note 1)

Features

9.6 A, 20 V.

Occupies only 0.10 cm

1/3 the area of SO-8.

Ultra-thin package: less than 0.70 mm height when

mounted to PCB.

ESD protection diode (note 3)

Outstanding thermal transfer characteristics:

significantly better than SO-8.

Ultra-low Q

High power and current handling capability

x R

Tape width

DS(ON)

–55 to +150

12mm

DS(ON)

Ratings

9.6

2.1

6.3

0.6

figure-of-merit

= 14 m

= 20 m @ V

of PCB area:

@ V

FDZ2553NZ Rev C (W)

July 2003

= 2.5 V

= 4.5 V

3000 units

Quantity

Units

C/W

Related parts for FDZ2553NZ

FDZ2553NZ Summary of contents

Page 1

... C unless other wise noted A (Note 1a) (Note 1a) (Note 1a) (Note 1) (Note 1) Reel Size 7’’ July 2003 4.5 V DS(ON 2.5 V DS(ON PCB area figure-of-merit g DS(ON) Ratings Units 9 2.1 W –55 to +150 C 60 C/W 6.3 0.6 Tape width Quantity 12mm 3000 units FDZ2553NZ Rev C (W) ...

Page 2

... GS GEN 9 1.7 A (Note 9.6A 100 A/µ the thermal reference point for the case is defined as the top surface of the JC is determined by the user's board design. JA Typ Max Units mV 0.6 0.9 1.5 V –0.3 mV 1240 pF 320 pF 170 pF 2 1.7 A 0.7 1 FDZ2553NZ Rev C (W) ...

Page 3

... Dimensional Outline and Pad Layout FDZ2553NZ Rev C (W) ...

Page 4

... C 0.01 0.001 0.0001 2 2.5 0 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. = 2.5V 3.0V 3.5V 4.0V 4. DRAIN CURRENT ( =4 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDZ2553NZ Rev C ( ...

Page 5

... Figure 8. Capacitance Characteristics. 50 1ms 40 10ms 100 0.01 Figure 10. Single Pulse Maximum 0 TIME (sec 1MHz iss C oss DRAIN TO SOURCE VOLTAGE ( SINGLE PULSE R = 108°C 25° 100 t , TIME (sec) 1 Power Dissipation. R ( 108 °C/W JA P(pk ( Duty Cycle 100 1000 FDZ2553NZ Rev C (W) 20 1000 ...

Page 6

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet Series™ Bottomless™ FAST CoolFET™ FASTr™ CROSSVOLT™ ...

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