IRF7389 International Rectifier, IRF7389 Datasheet - Page 6

MOSFET N+P 30V 5.3A 8-SOIC

IRF7389

Manufacturer Part Number
IRF7389
Description
MOSFET N+P 30V 5.3A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF7389

Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
29 mOhm @ 5.8A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
7.3A, 5.3A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
33nC @ 10V
Input Capacitance (ciss) @ Vds
650pF @ 25V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF7389

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6
100
100
10
10
1
1
0.1
3.0
TOP
BOTTOM - 3.0V
-V
-V
3.5
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
- 15V
VGS
DS
GS
, Drain-to-Source Voltage (V)
, Gate-to-Source Voltage (V)
T = 25°C
J
4.0
1
4.5
T = 150°C
J
V
20µs PULSE WIDTH
20µs PULSE WIDTH
T = 25°C
J
DS
= -10V
5.0
-3.0V
5.5
10
6.0
A
A
100
100
10
10
1
1
0.4
0.1
TOP
BOTTOM - 3.0V
-V
-V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
- 15V
0.6
SD
VGS
DS
T = 150°C
J
, Source-to-Drain Voltage (V)
, Drain-to-Source Voltage (V)
0.8
1
T = 25°C
J
20µs PULSE WIDTH
T = 150°C
1.0
J
-3.0V
www.irf.com
1.2
V
GS
= 0V
1.4
10
A
A

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