IRF9953 International Rectifier, IRF9953 Datasheet - Page 5

• Manufacturer Part Number: IRF9953
• Description: MOSFET 2P-CH 30V 2.3A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF9953

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 250 mOhm @ 1A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 2.3A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 10V
• Input Capacitance (ciss) @ Vds: 190pF @ 15V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF9953

100
0.1
10
0.00001
4 0 0
3 0 0
2 0 0
1 0 0
1
0
1
0.50
0.20
0.10
0.05
0.02
0.01
Fig 9. Typical Capacitance Vs.
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
C
C
C
Drain-to-Source Voltage
-V
rs s
iss
o s s
D S
V
C
C
C
(THERMAL RESPONSE)
0.0001
, Drain-to-Source V oltage (V)
G S
iss
rs s
os s
SINGLE PULSE
= 0V ,
= C
= C
= C
gs
g d
ds
+ C
+ C
1 0
g d
gd
f = 1MH z
0.001
, C
ds
S H OR TED
t , Rectangular Pulse Duration (sec)
1
0.01
1 0 0
A
20
16
12
8
4
0
0.1
0
I =
D
Fig 10. Typical Gate Charge Vs.
-2.3A
Gate-to-Source Voltage
1. Duty factor D =
2. Peak T = P
Notes:
Q , Total Gate Charge (nC)
2
G
1
J
4
DM
x Z
t / t
1
thJA
IRF9953
V
P
2
6
DS
DM
+ T
10
=-10V
A
t
1
t
8
2
10
100