BAT85 NXP Semiconductors, BAT85 Datasheet - Page 2

• Manufacturer Part Number: BAT85
• Description: DIODE, SCHOTTKY, DO-34
• Manufacturer: NXP Semiconductors

Specifications of BAT85

• Voltage Vrrm: 30V
• Av Current If: 200mA
• Max Voltage Vf: 0.4V
• Max Reverse Recoverytime, Trr: 4ns
• Max Current Ifs: 5A
• Operating Temperature Range: -65°C To +125°C
• Diode Case Style: DO-34
• No.: RoHS Compliant
• Diode Type: Schottky

NXP Semiconductors
FEATURES
• Low forward voltage
• Guard ring protected
• Hermetically-sealed leaded glass
APPLICATIONS
• Ultra high-speed switching
• Voltage clamping
• Protection circuits
• Blocking diodes.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
2000 May 25
V
I
I
I
I
T
T
T
SYMBOL
F
F(AV)
FRM
FSM
package.
stg
j
amb
R
Schottky barrier diode
continuous reverse voltage
continuous forward current
average forward current
repetitive peak forward current
non-repetitive peak forward current
storage temperature
junction temperature
operating ambient temperature
PARAMETER
DESCRIPTION
Planar Schottky barrier diode with an integrated protection ring against static
discharges, encapsulated in a hermetically-sealed subminiature SOD68
(DO-34) package. The diode is suitable for mounting on a 2 E (5.08 mm) pitch.
Fig.1 Simplified outline (SOD68; DO-34), pin configuration and symbol.
handbook, halfpage
PCB mounting, lead length = 4 mm;
V
T
t
t
p
p
amb
RWM
≤ 1 s; δ 0.5
≤ 10 ms
= 50 °C; see Fig.2
= 25 V; a = 1.57; δ = 0.5;
2
k
CONDITIONS
−
−
−
−
−
−65
−
−65
MIN.
a
Product data sheet
30
200
200
300
5
+150
125
+125
MAX.
MAM193
BAT85
V
mA
mA
mA
A
°C
°C
°C
UNIT