2N7002 Fairchild Semiconductor, 2N7002 Datasheet

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2N7002

Manufacturer Part Number
2N7002
Description
MOSFET N-CH 60V 115MA SOT-23
Manufacturer
Fairchild Semiconductor
Type
Small Signalr
Datasheet

Specifications of 2N7002

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
7.5 Ohm @ 500mA, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
115mA
Vgs(th) (max) @ Id
2.5V @ 250µA
Input Capacitance (ciss) @ Vds
50pF @ 25V
Power - Max
200mW
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
7.5 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
0.08 S
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.115 A
Power Dissipation
200 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
7.5Ohm
Drain-source On-volt
60V
Gate-source Voltage (max)
±20V
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
SOT-23
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Dc
09+
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
2N7002N
2N7002NTR

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Absolute Maximum Ratings
Symbol
V
V
V
I
P
T
T
THERMAL CHARACTERISTICS
R
© 1997 Fairchild Semiconductor Corporation
General Description
___________________________________________________________________________________________
D
These N-Channel enhancement mode field effect transistors
are produced using Fairchild's proprietary, high cell density,
DMOS technology. These products have been designed to
minimize on-state resistance while provide rugged, reliable,
and fast switching performance. They can be used in most
applications requiring up to 400mA DC and can deliver
pulsed currents up to 2A. These products are particularly
suited for low voltage, low current applications such as small
servo motor control, power MOSFET gate drivers, and other
switching applications.
2N7000 / 2N7002 / NDS7002A
N-Channel Enhancement Mode Field Effect Transistor
DSS
GSS
D
J
L
DGR
,T
JA
STG
D
G
S
Parameter
Drain-Source Voltage
Drain-Gate Voltage (R
Gate-Source Voltage - Continuous
Maximum Drain Current - Continuous
Maximum Power Dissipation
Derated above 25
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering
Purposes, 1/16" from Case for 10 Seconds
Thermal Resistance, Junction-to-Ambient
TO-92
2N7000
- Non Repetitive (tp < 50µs)
o
C
GS
- Pulsed
< 1 M )
T
A
= 25°C unless otherwise noted
2N7002/NDS7002A
(TO-236AB)
2N7000
312.5
200
500
400
Features
3.2
High density cell design for low R
Voltage controlled small signal switch.
Rugged and reliable.
High saturation current capability.
-55 to 150
2N7002
115
800
200
300
625
1.6
60
60
20
40
G
D
-65 to 150
S
NDS7002A
DS(ON)
1500
280
300
417
2.4
November 1995
.
2N7000.SAM Rev. A1
mW/°C
Units
°C/W
mW
mA
°C
°C
V
V
V

Related parts for 2N7002

2N7002 Summary of contents

Page 1

... NDS7002A N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 400mA DC and can deliver pulsed currents ...

Page 2

... NDS7002A 2N7000 2N7002 NDS7002A 2N7000 2N7002 NDS7002A 2N7000 0.8 2.1 2N7002 1 2.1 NDS7002A 2N7000 1.2 =125°C 1.9 1.8 2N7002 1.2 =100°C 1.7 1.7 =100C 2.4 A 1.2 NDS7002 =125°C 2 1.7 =125°C 2.8 2N7000 0.6 0.14 2N7002 0.6 ...

Page 3

... NDS7002A 500 2700 2N7000 100 320 mS 2N7002 80 320 NDS7002A 80 320 All 20 50 All 11 25 All 4 5 2N7000 2N700 20 NDS7002A 2N7000 2N700 20 A NDS7002 2N7002 115 mA NDS7002A 280 2N7002 0.8 NDS7002A 1.5 2N7002 0.88 1.5 A 0.88 1.2 NDS7002 2N7000.SAM Rev ...

Page 4

... T , JUNCTION T EMPERATURE (°C) J Figure 3. On-Resistance Variation with Temperature -55° 10V DS 1.6 1.2 0.8 0 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics 2N7000 / 2N7002 / NDS7002A 8.0 7 6 4 Figure 2. On-Resistance Variation with Gate Figure 4. On-Resistance Variation with Drain 1 .1 25° ...

Page 5

... Figure 7. Breakdown Voltage Variation with Temperature MHz DRAIN TO SOURCE VOLTAGE (V) DS Figure 9. Capacitance Characteristics GEN G S Figure 11. (continued) 2N7000 / 2N7002 /NDS7002A 100 125 150 Figure 8. Body Diode Forward Voltage Variation with iss 8 C oss rss Figure 10. Gate Charge Characteristics t d(on OUT ...

Page 6

... Single Pulse 0.01 0.0001 0.001 Figure 16. TO-92, 2N7000 Transient Thermal Response Curve 0.2 0 0.01 Single Pulse 0.002 0.001 0.0001 0.001 Figure 17. SOT-23, 2N7002 / NDS7002A Transient Thermal Response Curve (continued 0.5 0.1 0. SINGLE PULSE 0. 0.005 Figure 14. 2N7002 Maximum ...

Page 7

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FASTr™ Bottomless™ GlobalOptoisolator™ CoolFET™ GTO™ CROSSVOLT™ HiSeC™ DOME™ ISOPLANAR™ ...

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