FDN306P Fairchild Semiconductor, FDN306P Datasheet - Page 4

• Manufacturer Part Number: FDN306P
• Description: MOSFET P-CH 12V 2.6A SSOT3
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDN306P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 40 mOhm @ 2.6A, 4.5V
• Drain To Source Voltage (vdss): 12V
• Current - Continuous Drain (id) @ 25° C: 2.6A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1138pF @ 6V
• Power - Max: 460mW
• Mounting Type: Surface Mount
• Package / Case: 3-SSOT, SuperSOT-3
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.04 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 10 S
• Drain-source Breakdown Voltage: 12 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 2.6 A
• Power Dissipation: 500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDN306PTR

Typical Characteristics
0.01
100
0.1
10
5
4
3
2
1
0
Figure 9. Maximum Safe Operating Area.
1
0
0.1
Figure 7. Gate Charge Characteristics.
0.001
I
R
0.01
D
SINGLE PULSE
R
DS(ON)
0.1
= -2.6A
θJA
V
0.0001
T
1
GS
A
= 270
= 25
LIMIT
= -4.5V
3
o
o
C
C/W
D = 0.5
-V
0.2
DS
0.1
0.05
, DRAIN-SOURCE VOLTAGE (V)
0.02
Q
1
g
0.01
DC
, GATE CHARGE (nC)
6
0.001
1s
100ms
SINGLE PULSE
10ms
Figure 11. Transient Thermal Response Curve.
V
9
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
1ms
DS
= -4V
10
100µs
0.01
-8V
12
-6V
100
15
0.1
t
1
, TIME (sec)
2000
1600
1200
800
400
30
25
20
15
10
5
0
0.001
0
Figure 8. Capacitance Characteristics.
0
1
Figure 10. Single Pulse Maximum
0.01
C
RSS
-V
DS
Power Dissipation.
3
, DRAIN TO SOURCE VOLTAGE (V)
C
OSS
10
0.1
t
1
, TIME (sec)
C
ISS
6
P(pk)
Duty Cycle, D = t
T
R
J
R
θJA
1
- T
θJA
(t) = r(t) * R
100
A
t
= 270
1
= P * R
t
2
SINGLE PULSE
9
R
o
θJA
C/W
10
T
θJA
A
f = 1 MHz
V
= 270°C/W
1
θJA
FDN306P Rev D W)
= 25°C
GS
(t)
/ t
= 0 V
2
1000
100
12