SI2306BDS-T1-E3 Vishay, SI2306BDS-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI2306BDS-T1-E3
• Description: MOSFET N-CH 30V 3.16A SOT23-3
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI2306BDS-T1-E3

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 47 mOhm @ 3.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 3.16A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 4.5nC @ 5V
• Input Capacitance (ciss) @ Vds: 305pF @ 15V
• Power - Max: 750mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.047 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3.16 A
• Power Dissipation: 750 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 3.16A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 94mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI2306BDS-T1-E3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 73234
S-80642-Rev. B, 24-Mar-08
0.10
0.08
0.06
0.04
0.02
0.00
10
0.1
10
8
6
4
2
0
1
0.0
0
0
V
I
D
DS
Source-Drain Diode Forward Voltage
= 3.5 A
2
0.2
= 15 V
On-Resistance vs. Drain Current
1
V
GS
V
4
SD
T
= 4.5 V
Q
J
- Source-to-Drain Voltage (V)
g
= 150 °C
0.4
2
I
- Total Gate Charge (nC)
D
6
Gate Charge
- Drain Current (A)
0.6
3
8
10
0.8
4
V
12
GS
T
J
= 10 V
= 25 °C
1.0
5
14
16
1.2
6
400
350
300
250
200
150
100
1.6
1.4
1.2
1.0
0.8
0.6
0.5
0.4
0.3
0.2
0.1
0.0
50
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
V
I
- 25
D
GS
C
= 3.5 A
rss
5
= 10 V
V
2
V
DS
T
GS
0
J
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
10
Capacitance
25
4
C
C
15
50
oss
Vishay Siliconix
iss
Si2306BDS
I
D
6
75
= 3.5 A
20
www.vishay.com
100
8
25
125
150
30
10
3