FDFMA2P853 Fairchild Semiconductor, FDFMA2P853 Datasheet - Page 5

• Manufacturer Part Number: FDFMA2P853
• Description: MOSFET P-CH 20V 3A MICROFET6
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDFMA2P853

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 120 mOhm @ 3A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3A
• Vgs(th) (max) @ Id: 1.3V @ 250µA
• Gate Charge (qg) @ Vgs: 6nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 435pF @ 10V
• Power - Max: 700mW
• Mounting Type: Surface Mount
• Package / Case: 6-MLP, 6-MicroFET™
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDFMA2P853TR

Typical Characteristics
0.001
5
4
3
2
1
0
0.01
Figure 9.
0.1
0
10
1
Figure 7.
I
D
0
= -3.0A
T
J
0.1
= 125
1
Schottky Diode Forward Voltage
o
Gate Charge Characteristics
C
0.2
V
F
, FORWARD VOLTAGE (V)
Q
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
g
, GATE CHARGE (nC)
0.3
2
V
DS
T
= -5V
0.4
J
Figure 11. Transient Thermal Response Curve
= 25
o
3
C
0.5
-10V
-15V
0.6
4
0.7
0.8
5
5
0.000001
700
600
500
400
300
200
100
0.00001
Figure 10.
0.0001
0
0.001
0.01
0
Figure 8.
C
rss
0
4
Schottky Diode Reverse Current
-V
C
Capacitance Characteristics
oss
DS
, DRAIN TO SOURCE VOLTAGE (V)
5
V
R
, REVERSE VOLTAGE (V)
8
T
T
J
T
C
J
= 125
J
10
= 85
iss
= 25
12
o
o
o
C
C
C
FDFMA2P853 Rev. D2 (W)
15
16
V
f = 1MHz
GS
= 0 V
20
20