FDD8447L Fairchild Semiconductor, FDD8447L Datasheet
FDD8447L
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FDD8447L Summary of contents
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... R Thermal Resistance, Junction to Ambient θJA Package Marking and Ordering Information Device Marking Device FDD8447L FDD8447L ©2008 Fairchild Semiconductor Corporation FDD8447L Rev.C3 ® MOSFET General Description = 14A This N-Channel MOSFET has been produced using Fairchild D Semiconductor’s proprietary PowerTrench = 11A D deliver low r superior performance benefit in the application ...
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... Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%. 3: Starting 1mH, IAS = 17.5A, VDD = 40V, VGS = 10V. 4 FDD8447L Rev. 25°C unless otherwise noted J Test Conditions I = 250µ ...
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... Figure 3. On-Resistance Variation with Temperature 100 125 1 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics FDD8447L Rev.C3 3 2.6 2.2 3.5V 1.8 1.4 1 3.0V 0.6 0 1.5 2 2.5 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage 0.02 0.0175 0.015 0.0125 0.01 T 0.0075 0.005 75 ...
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... V , DRAIN-SOURCE VOLTAGE (V) DS Figure 9. Maximum Safe Operating Area 100 0.0001 0.001 0.01 0 TIME (sec) 1 Figure 11. Single Pulse Maximum Peak Current FDD8447L Rev.C3 3000 = 10V DS 30V 2500 2000 20V 1500 1000 500 C rss Figure 8. Capacitance Characteristics 100 100µs 80 1ms 10ms ...
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... SINGLE 0.001 0.0001 0.001 Figure 13. Transient Thermal Response Curve Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDD8447L Rev.C3 0.01 0 TIME (sec ( θJA θ 96° ...
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... Definition of Terms Datasheet Identification Product Status Advance Information Formative or In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDD8447L Rev.C3 FPS™ PDP-SPM™ F-PFS™ Power-SPM™ ® FRFET PowerTrench Global Power Resource SM Programmable Active Droop™ ...