FDB5800 Fairchild Semiconductor, FDB5800 Datasheet - Page 4

• Manufacturer Part Number: FDB5800
• Description: MOSFET N-CH 60V 80A D2PAK
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r
• Type: Power MOSFETr

Specifications of FDB5800

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 135nC @ 10V
• Input Capacitance (ciss) @ Vds: 6625pF @ 15V
• Power - Max: 242W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 12.6 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 80 A
• Power Dissipation: 242000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 12.6Ohm
• Drain-source On-volt: 60V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: D2PAK
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDB5800TR

FDB5800 Rev. A1
Typical Characteristics
Figure 1.
1.2
1.0
0.8
0.6
0.4
0.2
0
0.01
1000
0.1
100
0
50
2
1
10
10
-5
DUTY CYCLE - DESCENDING ORDER
Normalized Power Dissipation vs Case
0.5
0.2
0.1
0.05
0.02
0.01
-5
25
V
GS
= 5V
T
50
C
SINGLE PULSE
Temperature
, CASE TEMPERATURE (
Figure 3.
10
75
10
-4
-4
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
100
Normalized Maximum Transient Thermal Impedance
T
C
Figure 4.
= 25°C unless otherwise noted
125
o
C)
10
10
-3
-3
t, RECTANGULAR PULSE DURATION (s)
150
Peak Current Capability
175
t, PULSE WIDTH (s)
4
Figure 2.
10
10
-2
-2
140
120
100
40
80
60
20
0
25
Maximum Continuous Drain Current vs
R
θ
JC
= 0.62°C/W
50
Case Temperature
10
10
CURRENT LIMITED
BY PACKAGE
-1
-1
T
NOTES:
DUTY FACTOR: D = t
PEAK T
C
, CASE TEMPERATURE (°C)
75
J
= P
FOR TEMPERATURES
ABOVE 25
CURRENT AS FOLLOWS:
T
C
DM
I = I
100
= 25
VGS = 5V
x R
25
o
10
10
θJC
C
P
DM
0
1
0
o
/t
C DERATE PEAK
+ T
VGS =10V
2
125
175 - T
www.fairchildsemi.com
C
150
t
1
t
C
2
150
10
10
1
1