SI7463DP-T1-GE3 Vishay, SI7463DP-T1-GE3 Datasheet - Page 5

• Manufacturer Part Number: SI7463DP-T1-GE3
• Description: MOSFET P-CH 40V 11A PPAK 8SOIC
• Manufacturer: Vishay

Specifications of SI7463DP-T1-GE3

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 9.2 mOhm @ 18.6A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 140nC @ 10V
• Power - Max: 1.9W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® SO-8
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Resistance Drain-source Rds (on): 0.0092 Ohm @ 10 V
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 11 A
• Power Dissipation: 1900 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: -18.6A
• Drain Source Voltage Vds: -40V
• On Resistance Rds(on): 14mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Threshold Voltage Vgs Typ: -3V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI7463DP-T1-GE3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72440.
Document Number: 72440
S09-1928-Rev. F, 28-Sep-09
0.01
0.1
2
1
10
-
4
Duty Cycle = 0.5
0.2
0.1
Single Pulse
0.02
0.05
Normalized Thermal Transient Impedance, Junction-to-Case
10
-
3
Square Wave Pulse Duration (s)
10
-
2
10
-
1
Vishay Siliconix
Si7463DP
www.vishay.com
1
5